The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe16N2 thin films

Meiyin Yang; Lawrence F. Allard; Nian Ji; Xiaowei Zhang; Guang Hua Yu; Jian Ping Wang

doi:10.1063/1.4847315

The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe₁₆N₂ thin films

Meiyin Yang, Lawrence F. Allard, Nian Ji, Xiaowei Zhang, Guang Hua Yu, Jian Ping Wang

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15 Scopus citations

Abstract

Partially ordered Fe-N thin films were grown by a facing target sputtering process on the surface of a (001) Ag underlayer on MgO substrates. It was confirmed by x-ray diffraction that the Ag layer enlarged the in-plane lattice of the Fe-N thin films. Domains of the ordered α″-Fe ₁₆N₂ phase within an epitaxial (001) α′- Fe_xN phase were identified by electron diffraction and high-resolution aberration-corrected scanning transmission electron microscopy (STEM) methods. STEM dark-field and bright-field images showed the fully ordered structure of the α″-Fe₁₆N₂ at the atomic column level. High saturation magnetization(Ms) of 1890 emu/cc was obtained for α″-Fe₁₆N₂ on the Ag underlayer, while only 1500 emu/cc was measured for Fe-N on the Fe underlayer. The results are likely due to a tensile strain induced in the α″-Fe₁₆N ₂ phase by the Ag structure at the interface.

Original language	English
Article number	242412
Journal	Applied Physics Letters
Volume	103
Issue number	24
DOIs	https://doi.org/10.1063/1.4847315
State	Published - Dec 9 2013
Externally published	Yes

Funding

This work was partially supported by a DOE ARPA-E REACT Program, DE-AR0000199, and National Science Foundation of China, Grant Nos. 51331002 and 51371027.

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10.1063/1.4847315

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title = "The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe16N2 thin films",

abstract = "Partially ordered Fe-N thin films were grown by a facing target sputtering process on the surface of a (001) Ag underlayer on MgO substrates. It was confirmed by x-ray diffraction that the Ag layer enlarged the in-plane lattice of the Fe-N thin films. Domains of the ordered α″-Fe 16N2 phase within an epitaxial (001) α′- FexN phase were identified by electron diffraction and high-resolution aberration-corrected scanning transmission electron microscopy (STEM) methods. STEM dark-field and bright-field images showed the fully ordered structure of the α″-Fe16N2 at the atomic column level. High saturation magnetization(Ms) of 1890 emu/cc was obtained for α″-Fe16N2 on the Ag underlayer, while only 1500 emu/cc was measured for Fe-N on the Fe underlayer. The results are likely due to a tensile strain induced in the α″-Fe16N 2 phase by the Ag structure at the interface.",

author = "Meiyin Yang and Allard, {Lawrence F.} and Nian Ji and Xiaowei Zhang and Yu, {Guang Hua} and Wang, {Jian Ping}",

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T1 - The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe16N2 thin films

AU - Yang, Meiyin

AU - Allard, Lawrence F.

AU - Ji, Nian

AU - Zhang, Xiaowei

AU - Yu, Guang Hua

AU - Wang, Jian Ping

PY - 2013/12/9

Y1 - 2013/12/9

N2 - Partially ordered Fe-N thin films were grown by a facing target sputtering process on the surface of a (001) Ag underlayer on MgO substrates. It was confirmed by x-ray diffraction that the Ag layer enlarged the in-plane lattice of the Fe-N thin films. Domains of the ordered α″-Fe 16N2 phase within an epitaxial (001) α′- FexN phase were identified by electron diffraction and high-resolution aberration-corrected scanning transmission electron microscopy (STEM) methods. STEM dark-field and bright-field images showed the fully ordered structure of the α″-Fe16N2 at the atomic column level. High saturation magnetization(Ms) of 1890 emu/cc was obtained for α″-Fe16N2 on the Ag underlayer, while only 1500 emu/cc was measured for Fe-N on the Fe underlayer. The results are likely due to a tensile strain induced in the α″-Fe16N 2 phase by the Ag structure at the interface.

AB - Partially ordered Fe-N thin films were grown by a facing target sputtering process on the surface of a (001) Ag underlayer on MgO substrates. It was confirmed by x-ray diffraction that the Ag layer enlarged the in-plane lattice of the Fe-N thin films. Domains of the ordered α″-Fe 16N2 phase within an epitaxial (001) α′- FexN phase were identified by electron diffraction and high-resolution aberration-corrected scanning transmission electron microscopy (STEM) methods. STEM dark-field and bright-field images showed the fully ordered structure of the α″-Fe16N2 at the atomic column level. High saturation magnetization(Ms) of 1890 emu/cc was obtained for α″-Fe16N2 on the Ag underlayer, while only 1500 emu/cc was measured for Fe-N on the Fe underlayer. The results are likely due to a tensile strain induced in the α″-Fe16N 2 phase by the Ag structure at the interface.

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The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe₁₆N₂ thin films

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