Abstract
The metal-induced crystallization (MIC) of hydrogenated sputtered amorphous silicon (a-Si:H) using aluminum has been investigated using X-ray diffraction (XRD) and scanning Auger microanalysis (SAM). Hydrogenated, as well as non-hydrogenated, amorphous silicon (a-Si) films were sputtered on glass substrates, then capped with a thin layer of Al. Following the depositions, the samples were annealed in the temperature range 200 °C to 400 °C for varying periods of time. Crystallization of the samples was confirmed by XRD. Non-hydrogenated films started to crystallize at 350 °C. On the other hand, crystallization of the samples with the highest hydrogen (H2) content initiated at 225 °C. Thus, the crystallization temperature is affected by the H2 content of the a-Si. Material structure following annealing was confirmed by SAM. In this paper, a comprehensive model for MIC of a-Si is developed based on these experimental results.
Original language | English |
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Pages (from-to) | 184-190 |
Number of pages | 7 |
Journal | Thin Solid Films |
Volume | 510 |
Issue number | 1-2 |
DOIs | |
State | Published - Jul 3 2006 |
Funding
This work was supported by a grant from Department of Energy/Arkansas EPSCoR program under Lab Partnership Program (Award No. DE-FG02-ER45965). The support of the Department of Electrical Engineering in partially supporting one graduate student is duly acknowledged. Auger analysis was sponsored by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of FreedomCAR and Vehicle Technologies, as part of the High Temperature Materials Laboratory User Program, Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy under contract number DE-AC05-00OR22725.
Keywords
- Amorphous materials
- Crystallization
- Hydrogen
- Sputtering