The durability of various crucible materials for aluminum nitride crystal growth by sublimation

B. Liu, J. H. Edgar, Z. Gu, D. Zhuang, B. Raghothamachar, M. Dudley, A. Sarua, Martin Kuball, H. M. Meyer

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Producing high purity aluminum nitride crystals by the sublimation-recondensation technique is difficult due to the inherently reactive crystal growth environment, normally at temperature in excess of 2100°C. The durability of the furnace fixture materials (crucibles, retorts, etc.) at such a high temperature remains a critical problem. In the present study, the suitability of several refractory materials for A1N crystal growth is investigated, including tantalum carbide, niobium carbide, tungsten, graphite, and hot-pressed boron nitride. The thermal and chemical properties and performance of these materials in inert gas, as well as under A1N crystal growth conditions are discussed. TaC and NbC are the most stable crucible materials with very low elemental vapor pressures in the crystal growth system. Compared with refractory material coated graphite crucibles, HPBN crucible is better for A1N self-seeded growth, as crystals tend to nucleate in thin colorless platelets with low dislocation density.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume9
DOIs
StatePublished - 2004

Fingerprint

Dive into the research topics of 'The durability of various crucible materials for aluminum nitride crystal growth by sublimation'. Together they form a unique fingerprint.

Cite this