The design and development of the EBIS LEBT solenoid power supply

Y. Tan; J. Addessi; J. Alessi; R. Lambiase; C. J. Liaw; A. Pikin; J. Sandberg; W. Zhang; V. Zubets

doi:10.1109/IPMHVC.2010.5958356

The design and development of the EBIS LEBT solenoid power supply

Y. Tan
, J. Addessi
, J. Alessi
, R. Lambiase
, C. J. Liaw
, A. Pikin
, J. Sandberg
, W. Zhang
, V. Zubets

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This power supply was designed and developed at Brookhaven National Laboratory (BNL) as part of a new ion pre-injector system called EBIS (Electron Beam Ion Source). It consists of a charging power supply, a capacitor bank, a discharge and recovery circuit and control circuits. The output is fed through cables into a solenoid magnet. The magnet's inductance is 1.9mH. The maximum charging voltage is 1000V. The power supply output is a half sine wave of 13ms duration. The repetition rate is 5Hz. The power supply output can be set to any value between 250A and 1900A in one second in order to accommodate the varying species of ions specified by different machine users.

Original language	English
Title of host publication	Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Pages	314-316
Number of pages	3
DOIs	https://doi.org/10.1109/IPMHVC.2010.5958356
State	Published - 2010
Externally published	Yes
Event	2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 - Atlanta, GA, United States Duration: May 23 2010 → May 27 2010

Publication series

Name	Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010

Conference

Conference	2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Country/Territory	United States
City	Atlanta, GA
Period	05/23/10 → 05/27/10

Keywords

EBIS
Power Supply

Access to Document

10.1109/IPMHVC.2010.5958356

Cite this

Tan, Y., Addessi, J., Alessi, J., Lambiase, R., Liaw, C. J., Pikin, A., Sandberg, J., Zhang, W., & Zubets, V. (2010). The design and development of the EBIS LEBT solenoid power supply. In Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 (pp. 314-316). Article 5958356 (Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010). https://doi.org/10.1109/IPMHVC.2010.5958356

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title = "The design and development of the EBIS LEBT solenoid power supply",

abstract = "This power supply was designed and developed at Brookhaven National Laboratory (BNL) as part of a new ion pre-injector system called EBIS (Electron Beam Ion Source). It consists of a charging power supply, a capacitor bank, a discharge and recovery circuit and control circuits. The output is fed through cables into a solenoid magnet. The magnet's inductance is 1.9mH. The maximum charging voltage is 1000V. The power supply output is a half sine wave of 13ms duration. The repetition rate is 5Hz. The power supply output can be set to any value between 250A and 1900A in one second in order to accommodate the varying species of ions specified by different machine users.",

keywords = "EBIS, Power Supply",

author = "Y. Tan and J. Addessi and J. Alessi and R. Lambiase and Liaw, \{C. J.\} and A. Pikin and J. Sandberg and W. Zhang and V. Zubets",

year = "2010",

doi = "10.1109/IPMHVC.2010.5958356",

language = "English",

isbn = "9781424471294",

series = "Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010",

pages = "314--316",

booktitle = "Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010",

note = "2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 ; Conference date: 23-05-2010 Through 27-05-2010",

}

Tan, Y, Addessi, J, Alessi, J, Lambiase, R, Liaw, CJ, Pikin, A, Sandberg, J, Zhang, W & Zubets, V 2010, The design and development of the EBIS LEBT solenoid power supply. in Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010., 5958356, Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010, pp. 314-316, 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010, Atlanta, GA, United States, 05/23/10. https://doi.org/10.1109/IPMHVC.2010.5958356

The design and development of the EBIS LEBT solenoid power supply. / Tan, Y.; Addessi, J.; Alessi, J. et al.
Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010. 2010. p. 314-316 5958356 (Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Pikin, A.

AU - Sandberg, J.

AU - Zhang, W.

AU - Zubets, V.

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AB - This power supply was designed and developed at Brookhaven National Laboratory (BNL) as part of a new ion pre-injector system called EBIS (Electron Beam Ion Source). It consists of a charging power supply, a capacitor bank, a discharge and recovery circuit and control circuits. The output is fed through cables into a solenoid magnet. The magnet's inductance is 1.9mH. The maximum charging voltage is 1000V. The power supply output is a half sine wave of 13ms duration. The repetition rate is 5Hz. The power supply output can be set to any value between 250A and 1900A in one second in order to accommodate the varying species of ions specified by different machine users.

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Tan Y, Addessi J, Alessi J, Lambiase R, Liaw CJ, Pikin A et al. The design and development of the EBIS LEBT solenoid power supply. In Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010. 2010. p. 314-316. 5958356. (Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010). doi: 10.1109/IPMHVC.2010.5958356

The design and development of the EBIS LEBT solenoid power supply

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Keywords

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