The contribution of valence unstable ytterbium states into kinetic properties of YbNi2-xGe2+x and YbCu2-xSi2+x

B. C. Kuzhel; I. D. Shcherba; I. I. Kravchenko

doi:10.1016/j.jallcom.2006.01.072

The contribution of valence unstable ytterbium states into kinetic properties of YbNi_2-xGe_2+x and YbCu_2-xSi_2+x

B. C. Kuzhel, I. D. Shcherba, I. I. Kravchenko

Research output: Contribution to journal › Article › peer-review

Abstract

The intermetalic YbNi_2-xGe_2+x (-0.25 ≥ x ≥ 0.25) and YbCu_2-xSi_2+x (-0.20 ≥ x ≥ 0.20) alloy systems (CeGa₂Al₂ -type crystal structure) were studied by measuring X-ray absorption and diffraction at room temperatures as well as electrical resistivity and thermopower in the 4.2-300 K temperature range. The temperature dependence of the contribution of valence unstable Yb ions to the total electrical resistance has been analyzed. The qualitative estimation of this contribution has been performed by utilizing the following equation:Δ ρ_Yb (T) = ρ_exp (T) - ρ_YbC u₂ G e₂ (T) - Δ ρ_{4.2 K},where Δ ρ_YbC u₂ G e₂ (T) is the temperature dependence of YbCu₂Ge₂ electrical resistance, Δρ_4.2 = ρ_4.2(exp) - ρ_4.2(YbCu₂Ge₂).

Original language	English
Pages (from-to)	54-58
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	425
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2006.01.072
State	Published - Nov 30 2006
Externally published	Yes

Keywords

Electronic transport
Intermetallic
Kondo effects
X-ray diffraction
X-ray spectroscopies

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10.1016/j.jallcom.2006.01.072

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@article{82666a6d93104edd8cd6bb11f3ec0de0,

title = "The contribution of valence unstable ytterbium states into kinetic properties of YbNi2-xGe2+x and YbCu2-xSi2+x",

abstract = "The intermetalic YbNi2-xGe2+x (-0.25 ≥ x ≥ 0.25) and YbCu2-xSi2+x (-0.20 ≥ x ≥ 0.20) alloy systems (CeGa2Al2 -type crystal structure) were studied by measuring X-ray absorption and diffraction at room temperatures as well as electrical resistivity and thermopower in the 4.2-300 K temperature range. The temperature dependence of the contribution of valence unstable Yb ions to the total electrical resistance has been analyzed. The qualitative estimation of this contribution has been performed by utilizing the following equation:Δ ρYb (T) = ρexp (T) - ρYbC u2 G e2 (T) - Δ ρ4.2 K,where Δ ρYbC u2 G e2 (T) is the temperature dependence of YbCu2Ge2 electrical resistance, Δρ4.2 = ρ4.2(exp) - ρ4.2(YbCu2Ge2).",

keywords = "Electronic transport, Intermetallic, Kondo effects, X-ray diffraction, X-ray spectroscopies",

author = "Kuzhel, {B. C.} and Shcherba, {I. D.} and Kravchenko, {I. I.}",

year = "2006",

month = nov,

day = "30",

doi = "10.1016/j.jallcom.2006.01.072",

language = "English",

volume = "425",

pages = "54--58",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - The contribution of valence unstable ytterbium states into kinetic properties of YbNi2-xGe2+x and YbCu2-xSi2+x

AU - Kuzhel, B. C.

AU - Shcherba, I. D.

AU - Kravchenko, I. I.

PY - 2006/11/30

Y1 - 2006/11/30

N2 - The intermetalic YbNi2-xGe2+x (-0.25 ≥ x ≥ 0.25) and YbCu2-xSi2+x (-0.20 ≥ x ≥ 0.20) alloy systems (CeGa2Al2 -type crystal structure) were studied by measuring X-ray absorption and diffraction at room temperatures as well as electrical resistivity and thermopower in the 4.2-300 K temperature range. The temperature dependence of the contribution of valence unstable Yb ions to the total electrical resistance has been analyzed. The qualitative estimation of this contribution has been performed by utilizing the following equation:Δ ρYb (T) = ρexp (T) - ρYbC u2 G e2 (T) - Δ ρ4.2 K,where Δ ρYbC u2 G e2 (T) is the temperature dependence of YbCu2Ge2 electrical resistance, Δρ4.2 = ρ4.2(exp) - ρ4.2(YbCu2Ge2).

AB - The intermetalic YbNi2-xGe2+x (-0.25 ≥ x ≥ 0.25) and YbCu2-xSi2+x (-0.20 ≥ x ≥ 0.20) alloy systems (CeGa2Al2 -type crystal structure) were studied by measuring X-ray absorption and diffraction at room temperatures as well as electrical resistivity and thermopower in the 4.2-300 K temperature range. The temperature dependence of the contribution of valence unstable Yb ions to the total electrical resistance has been analyzed. The qualitative estimation of this contribution has been performed by utilizing the following equation:Δ ρYb (T) = ρexp (T) - ρYbC u2 G e2 (T) - Δ ρ4.2 K,where Δ ρYbC u2 G e2 (T) is the temperature dependence of YbCu2Ge2 electrical resistance, Δρ4.2 = ρ4.2(exp) - ρ4.2(YbCu2Ge2).

KW - Electronic transport

KW - Intermetallic

KW - Kondo effects

KW - X-ray diffraction

KW - X-ray spectroscopies

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U2 - 10.1016/j.jallcom.2006.01.072

DO - 10.1016/j.jallcom.2006.01.072

M3 - Article

AN - SCOPUS:33750577491

SN - 0925-8388

VL - 425

SP - 54

EP - 58

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

The contribution of valence unstable ytterbium states into kinetic properties of YbNi_2-xGe_2+x and YbCu_2-xSi_2+x

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Keywords

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