The coefficients of thermal expansion of boron arsenide (B 12As2) between 25 °c and 850 °c

C. E. Whiteley, M. J. Kirkham, J. H. Edgar

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7 Scopus citations

Abstract

The present investigation was undertaken to determine the coefficients of thermal expansion for the boron-rich compound semiconductor icosahedral boron arsenide (B12As2). B12As2 powder was synthesized in a sealed quartz ampoule containing boron and arsenic heated to 1100 °C and 600 °C respectively for 72 h. The lattice constants of the B12As2 were measured by high temperature X-ray diffraction (HTXRD) between 25 °C and 850 °C. The average lattice coefficients of thermal expansion were calculated perpendicular and parallel to the 〈111〉 axis in the rhombohedral setting (equivalent to the a and c axes in the hexagonal setting) as 4.9×10-6 K-1 and 5.3×10-6 K-1, respectively. The average unit cell volumetric coefficient of thermal expansion was 15.0×10 -6 K-1. Knowing these values can be useful in explaining the cracking that occurs in heteroepitaxial B12As2 thin films and crystals precipitated from metal solutions upon cooling from their synthesis temperatures.

Original languageEnglish
Pages (from-to)673-676
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume74
Issue number5
DOIs
StatePublished - May 2013
Externally publishedYes

Funding

Research supported in part by the Oak Ridge National Laboratory's SHARE User Facility , which is sponsored by the Office of Basic Energy Sciences, U.S. Department of Energy. The X-ray diffractometers are part of the High Temperature Materials Laboratory sponsored by the U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy, Vehicle Technologies Program. The present manuscript was based in part on Clinton Whiteley's doctoral thesis work recently completed at Kansas State University. Financial support was supplied by the National Science Foundation ( CBET 0736154 ), the Department of Homeland Security ( 2008-DN-077-ARI013-03 ), and the II–VI Inc. Foundation

Keywords

  • A. Electronic materials
  • A. Semiconductors
  • B. Chemical synthesis
  • C. X-ray diffraction
  • D. Thermal expansion

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