Abstract
The initial stages of interface formation for Ag deposited onto Ge(100)-(2 × 1) were studied with high-energy electron diffraction and high- resolution photoemission. The surface core-level energies for clean Ge(100)-(2 × 1) were not changed with the deposition of about one monolayer of Ag, indicating that there was no chemical reaction or atomic intermixing. The Ag nucleated at a coverage of about 1 3 monolayer and showed three-dimensional growth for higher coverages.
| Original language | English |
|---|---|
| Pages (from-to) | 327-330 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 50 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 1984 |
| Externally published | Yes |
Funding
Acknowledgements - This research was partially supported by the U.S. Department of Energy, Dwlsion of Materials Sciences, under Contract DE-AC02-76ER01198. Some of the equipment used for this research was obtained with grants from the Research Corporation and the General Motors Research Laboratories. We are grateful to E.W. Plummer for the use of his monochromator, and to E. Rowe and the staff of the Synchrotron Radiation Center for assistance. The Synchrotron Radiation Center is supported by the NSF under Contract DMR-80-20164.
| Funders | Funder number |
|---|---|
| Dwlsion of Materials Sciences | DE-AC02-76ER01198 |
| General Motors Research Laboratories | |
| National Science Foundation | DMR-80-20164 |
| U.S. Department of Energy | |
| Research Corporation for Science Advancement |