Tests of the Radiation Hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC Under Neutron, Proton, and Gamma Irradiation

H. J. Ziock; C. Milner; W. F. Sommer; N. Cartiglia; J. DeWitt; D. Dorfan; B. Hubbard; J. Leslie; K. F. O'Shaughnessy; D. Pitzl; W. A. Rowe; H. F.W. Sadrozinski; E. Spencer; P. Tennenbaum; J. Ellison; S. Jerger; C. Lietzke; S. J. Wimpenny; P. Ferguson; P. Giubellino

doi:10.1109/23.289308

Tests of the Radiation Hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC Under Neutron, Proton, and Gamma Irradiation

H. J. Ziock, C. Milner, W. F. Sommer, N. Cartiglia, J. DeWitt, D. Dorfan, B. Hubbard, J. Leslie, K. F. O'Shaughnessy, D. Pitzl, W. A. Rowe, H. F.W. Sadrozinski, E. Spencer, P. Tennenbaum, J. Ellison, S. Jerger, C. Lietzke, S. J. Wimpenny, P. Ferguson, P. Giubellino

Isotope Science and Enrichment Directora

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21 Scopus citations

Abstract

As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. We report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and γ-ray irradiations at U.C. Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC.

Original language	English
Pages (from-to)	269-276
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	38
Issue number	2
DOIs	https://doi.org/10.1109/23.289308
State	Published - Apr 1991

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Ziock, H. J., Milner, C., Sommer, W. F., Cartiglia, N., DeWitt, J., Dorfan, D., Hubbard, B., Leslie, J., O'Shaughnessy, K. F., Pitzl, D., Rowe, W. A., Sadrozinski, H. F. W., Spencer, E., Tennenbaum, P., Ellison, J., Jerger, S., Lietzke, C., Wimpenny, S. J., Ferguson, P., & Giubellino, P. (1991). Tests of the Radiation Hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC Under Neutron, Proton, and Gamma Irradiation. IEEE Transactions on Nuclear Science, 38(2), 269-276. https://doi.org/10.1109/23.289308

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title = "Tests of the Radiation Hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC Under Neutron, Proton, and Gamma Irradiation",

abstract = "As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. We report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and γ-ray irradiations at U.C. Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC.",

author = "Ziock, {H. J.} and C. Milner and Sommer, {W. F.} and N. Cartiglia and J. DeWitt and D. Dorfan and B. Hubbard and J. Leslie and O'Shaughnessy, {K. F.} and D. Pitzl and Rowe, {W. A.} and Sadrozinski, {H. F.W.} and E. Spencer and P. Tennenbaum and J. Ellison and S. Jerger and C. Lietzke and Wimpenny, {S. J.} and P. Ferguson and P. Giubellino",

year = "1991",

month = apr,

doi = "10.1109/23.289308",

language = "English",

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pages = "269--276",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

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Ziock, HJ, Milner, C, Sommer, WF, Cartiglia, N, DeWitt, J, Dorfan, D, Hubbard, B, Leslie, J, O'Shaughnessy, KF, Pitzl, D, Rowe, WA, Sadrozinski, HFW, Spencer, E, Tennenbaum, P, Ellison, J, Jerger, S, Lietzke, C, Wimpenny, SJ, Ferguson, P & Giubellino, P 1991, 'Tests of the Radiation Hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC Under Neutron, Proton, and Gamma Irradiation', IEEE Transactions on Nuclear Science, vol. 38, no. 2, pp. 269-276. https://doi.org/10.1109/23.289308

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T1 - Tests of the Radiation Hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC Under Neutron, Proton, and Gamma Irradiation

AU - Ziock, H. J.

AU - Milner, C.

AU - Sommer, W. F.

AU - Cartiglia, N.

AU - DeWitt, J.

AU - Dorfan, D.

AU - Hubbard, B.

AU - Leslie, J.

AU - O'Shaughnessy, K. F.

AU - Pitzl, D.

AU - Rowe, W. A.

AU - Sadrozinski, H. F.W.

AU - Spencer, E.

AU - Tennenbaum, P.

AU - Ellison, J.

AU - Jerger, S.

AU - Lietzke, C.

AU - Wimpenny, S. J.

AU - Ferguson, P.

AU - Giubellino, P.

PY - 1991/4

Y1 - 1991/4

N2 - As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. We report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and γ-ray irradiations at U.C. Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC.

AB - As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. We report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and γ-ray irradiations at U.C. Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC.

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

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ER -

Tests of the Radiation Hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC Under Neutron, Proton, and Gamma Irradiation

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