Abstract
The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL), including SiC device design and system modeling studies, will be discussed.
Original language | English |
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Pages (from-to) | 1673-1678 |
Number of pages | 6 |
Journal | PESC Record - IEEE Annual Power Electronics Specialists Conference |
Volume | 4 |
State | Published - 2002 |
Externally published | Yes |
Event | 2002 IEEE 33rd Annual Power Electronics Specialists Conference (PESC) - Cairns, Australia Duration: Jun 23 2002 → Jun 27 2002 |