Testing, characterization, and modeling of SiC diodes for transportation applications

Burak Ozpineci, Leon M. Tolbert, Syed K. Islam, Fang Z. Peng

Research output: Contribution to journalConference articlepeer-review

25 Scopus citations

Abstract

The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL), including SiC device design and system modeling studies, will be discussed.

Original languageEnglish
Pages (from-to)1673-1678
Number of pages6
JournalPESC Record - IEEE Annual Power Electronics Specialists Conference
Volume4
StatePublished - 2002
Externally publishedYes
Event2002 IEEE 33rd Annual Power Electronics Specialists Conference (PESC) - Cairns, Australia
Duration: Jun 23 2002Jun 27 2002

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