Temperature stability of InGaAlAs, InGaAsP, InGaAs and GaAs quantum-wells for 852 nm laser diode

In order to enhance the temperature stability of 852 nm laser diode, the gain of InGaAlAs, InGaAsP, InGaAs and GaAs quantum-wells were calculated by a comprehensive model theory, and the peak gain and wavelength versus operation temperature for the six different quantum-wells were compared and discussed. The results indicate that In _0.15Ga _0.74Al _0.11As quantum-well is the most appropriate candidate for 852 nm laser diode when the higher gain and better temperature stability demanded simultaneously. Compressive-strained In _0.15Ga _0.74Al _0.11As single quantum-well 852 nm laser diode was grown by metal-organic chemical vapor deposition (MOCVD). The wavelength shift with temperature for 852 nm laser diode is 0.256 nm/K, the experimental results are in good agreement with theoretical calculation results.