Abstract
We have fabricated optical channels in selectively masked planar GaAs/AlGaAs waveguide structures using both 10 MeV oxygen and 8 MeV carbon ions. Implantation at different temperatures appears to have a direct effect on the extracted propagation mode losses. Single-mode operation was observed from all the fabricated optical channels at a wavelength of 1.3 μm. The optical characterization results provide insight as to which ion beam parameters are best suited to optimize this fabrication process.
| Original language | English |
|---|---|
| Pages (from-to) | 704-708 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 141 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - May 1998 |
Funding
The authors would like to especially thank Eric Webster for accomplishing the masking procedure at the MICOM Laboratory. This project is supported in part by NSF-MRCE under grant number RII880291, by the Division of Materials Science, US Department of Energy, under contract DE-AC05-96OR22464 with Lockheed Martin Energy Research Corp., and the Howard J. Foster Center for Irradiation of Materials at Alabama A&M University.
Keywords
- GaAs/AlGaAs
- Ion implantation
- Optical waveguides
Fingerprint
Dive into the research topics of 'Temperature effects on the fabrication of optical channels in planar GaAs/AlGaAs waveguides using MeV ions'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver