Temperature effects on the fabrication of optical channels in planar GaAs/AlGaAs waveguides using MeV ions

T. Taylor; D. Ila; R. L. Zimmerman; J. C. Cochrane; P. R. Ashley; D. B. Poker; D. K. Hensley

doi:10.1016/S0168-583X(98)00119-0

Temperature effects on the fabrication of optical channels in planar GaAs/AlGaAs waveguides using MeV ions

T. Taylor, D. Ila, R. L. Zimmerman, J. C. Cochrane, P. R. Ashley, D. B. Poker, D. K. Hensley

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated optical channels in selectively masked planar GaAs/AlGaAs waveguide structures using both 10 MeV oxygen and 8 MeV carbon ions. Implantation at different temperatures appears to have a direct effect on the extracted propagation mode losses. Single-mode operation was observed from all the fabricated optical channels at a wavelength of 1.3 μm. The optical characterization results provide insight as to which ion beam parameters are best suited to optimize this fabrication process.

Original language	English
Pages (from-to)	704-708
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	141
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00119-0
State	Published - May 1998

Funding

The authors would like to especially thank Eric Webster for accomplishing the masking procedure at the MICOM Laboratory. This project is supported in part by NSF-MRCE under grant number RII880291, by the Division of Materials Science, US Department of Energy, under contract DE-AC05-96OR22464 with Lockheed Martin Energy Research Corp., and the Howard J. Foster Center for Irradiation of Materials at Alabama A&M University.

Funders	Funder number
Division of Materials Science
Howard J. Foster Center for Irradiation of Materials at Alabama A&M University
NSF-MRCE	RII880291
US Department of Energy	DE-AC05-96OR22464

Keywords

GaAs/AlGaAs
Ion implantation
Optical waveguides

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10.1016/S0168-583X(98)00119-0

Cite this

Taylor, T., Ila, D., Zimmerman, R. L., Cochrane, J. C., Ashley, P. R., Poker, D. B., & Hensley, D. K. (1998). Temperature effects on the fabrication of optical channels in planar GaAs/AlGaAs waveguides using MeV ions. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 141(1-4), 704-708. https://doi.org/10.1016/S0168-583X(98)00119-0

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title = "Temperature effects on the fabrication of optical channels in planar GaAs/AlGaAs waveguides using MeV ions",

abstract = "We have fabricated optical channels in selectively masked planar GaAs/AlGaAs waveguide structures using both 10 MeV oxygen and 8 MeV carbon ions. Implantation at different temperatures appears to have a direct effect on the extracted propagation mode losses. Single-mode operation was observed from all the fabricated optical channels at a wavelength of 1.3 μm. The optical characterization results provide insight as to which ion beam parameters are best suited to optimize this fabrication process.",

keywords = "GaAs/AlGaAs, Ion implantation, Optical waveguides",

author = "T. Taylor and D. Ila and Zimmerman, {R. L.} and Cochrane, {J. C.} and Ashley, {P. R.} and Poker, {D. B.} and Hensley, {D. K.}",

year = "1998",

month = may,

doi = "10.1016/S0168-583X(98)00119-0",

language = "English",

volume = "141",

pages = "704--708",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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}

Taylor, T, Ila, D, Zimmerman, RL, Cochrane, JC, Ashley, PR, Poker, DB & Hensley, DK 1998, 'Temperature effects on the fabrication of optical channels in planar GaAs/AlGaAs waveguides using MeV ions', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 141, no. 1-4, pp. 704-708. https://doi.org/10.1016/S0168-583X(98)00119-0

Temperature effects on the fabrication of optical channels in planar GaAs/AlGaAs waveguides using MeV ions. / Taylor, T.; Ila, D.; Zimmerman, R. L. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 141, No. 1-4, 05.1998, p. 704-708.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Temperature effects on the fabrication of optical channels in planar GaAs/AlGaAs waveguides using MeV ions

AU - Taylor, T.

AU - Ila, D.

AU - Zimmerman, R. L.

AU - Cochrane, J. C.

AU - Ashley, P. R.

AU - Poker, D. B.

AU - Hensley, D. K.

PY - 1998/5

Y1 - 1998/5

N2 - We have fabricated optical channels in selectively masked planar GaAs/AlGaAs waveguide structures using both 10 MeV oxygen and 8 MeV carbon ions. Implantation at different temperatures appears to have a direct effect on the extracted propagation mode losses. Single-mode operation was observed from all the fabricated optical channels at a wavelength of 1.3 μm. The optical characterization results provide insight as to which ion beam parameters are best suited to optimize this fabrication process.

AB - We have fabricated optical channels in selectively masked planar GaAs/AlGaAs waveguide structures using both 10 MeV oxygen and 8 MeV carbon ions. Implantation at different temperatures appears to have a direct effect on the extracted propagation mode losses. Single-mode operation was observed from all the fabricated optical channels at a wavelength of 1.3 μm. The optical characterization results provide insight as to which ion beam parameters are best suited to optimize this fabrication process.

KW - GaAs/AlGaAs

KW - Ion implantation

KW - Optical waveguides

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U2 - 10.1016/S0168-583X(98)00119-0

DO - 10.1016/S0168-583X(98)00119-0

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Temperature effects on the fabrication of optical channels in planar GaAs/AlGaAs waveguides using MeV ions

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