Temperature effects on radiation damage to silicon detectors

E. Barberis, J. G. Boissevain, N. Cartiglia, J. A. Ellison, P. Ferguson, J. K. Fleming, K. Holzscheiter, S. Jerger, D. Joyce, J. S. Kapustinsky, J. Leslie, C. Lietzke, J. A.J. Matthews, A. P.T. Palounek, D. Pitzl, W. A. Rowe, H. F.W. Sadrozinski, D. Skinner, W. F. Sommer, W. E. SondheimS. J. Wimpenny, H. J. Ziock

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

Motivated by the large particle fluences anticipated for the SSC and LHC, we are performing a systematic study of radiation damage to silicon microstrip detectors. Here we report radiation effects on detectors cooled to 0°C (the proposed operating point for a large SSC silicon tracker) including leakage currents and change in depletion voltage. We also present results on the annealing behavior of the radiation damage. Finally, we report results of charge collection measurements of the damaged detectors made with an 241Am α source.

Original languageEnglish
Pages (from-to)373-380
Number of pages8
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume326
Issue number1-2
DOIs
StatePublished - Mar 1 1993
Externally publishedYes

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