Temperature-dependent transport properties in oxide p - N junction above room temperature

Guo Zhen Liu; Kui Juan Jin; Meng He; Jie Qiu; Jie Xing; Hui Bin Lu; Guo Zhen Yang

doi:10.1088/0256-307X/25/6/078

Temperature-dependent transport properties in oxide p - N junction above room temperature

Guo Zhen Liu, Kui Juan Jin, Meng He, Jie Qiu, Jie Xing, Hui Bin Lu, Guo Zhen Yang

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Oxide p - n junctions of p -SrIn_0.1Ti_0.9O ₃/n-SrNb_0.01Ti_0.99O₃ (SITO/SNTO) are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p - n junction are investigated mainly in the temperature range of 300-400 K. The SITO/SNTO junction exhibited good rectifying behaviour over the whole temperature range. Our results indicate a possibility of application of oxide p - n junction in higher temperatures in future electronic devices.

Original language	English
Pages (from-to)	2209-2210
Number of pages	2
Journal	Chinese Physics Letters
Volume	25
Issue number	6
DOIs	https://doi.org/10.1088/0256-307X/25/6/078
State	Published - Jun 1 2008
Externally published	Yes

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title = "Temperature-dependent transport properties in oxide p - N junction above room temperature",

abstract = "Oxide p - n junctions of p -SrIn0.1Ti0.9O 3/n-SrNb0.01Ti0.99O3 (SITO/SNTO) are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p - n junction are investigated mainly in the temperature range of 300-400 K. The SITO/SNTO junction exhibited good rectifying behaviour over the whole temperature range. Our results indicate a possibility of application of oxide p - n junction in higher temperatures in future electronic devices.",

author = "Liu, {Guo Zhen} and Jin, {Kui Juan} and Meng He and Jie Qiu and Jie Xing and Lu, {Hui Bin} and Yang, {Guo Zhen}",

year = "2008",

month = jun,

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doi = "10.1088/0256-307X/25/6/078",

language = "English",

volume = "25",

pages = "2209--2210",

journal = "Chinese Physics Letters",

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number = "6",

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TY - JOUR

T1 - Temperature-dependent transport properties in oxide p - N junction above room temperature

AU - Liu, Guo Zhen

AU - Jin, Kui Juan

AU - He, Meng

AU - Qiu, Jie

AU - Xing, Jie

AU - Lu, Hui Bin

AU - Yang, Guo Zhen

PY - 2008/6/1

Y1 - 2008/6/1

N2 - Oxide p - n junctions of p -SrIn0.1Ti0.9O 3/n-SrNb0.01Ti0.99O3 (SITO/SNTO) are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p - n junction are investigated mainly in the temperature range of 300-400 K. The SITO/SNTO junction exhibited good rectifying behaviour over the whole temperature range. Our results indicate a possibility of application of oxide p - n junction in higher temperatures in future electronic devices.

AB - Oxide p - n junctions of p -SrIn0.1Ti0.9O 3/n-SrNb0.01Ti0.99O3 (SITO/SNTO) are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p - n junction are investigated mainly in the temperature range of 300-400 K. The SITO/SNTO junction exhibited good rectifying behaviour over the whole temperature range. Our results indicate a possibility of application of oxide p - n junction in higher temperatures in future electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=46749103290&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/25/6/078

DO - 10.1088/0256-307X/25/6/078

M3 - Article

AN - SCOPUS:46749103290

SN - 0256-307X

VL - 25

SP - 2209

EP - 2210

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 6

ER -

Temperature-dependent transport properties in oxide p - N junction above room temperature

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