TY - GEN
T1 - Temperature dependent Pspice model of silicon carbide power MOSFET
AU - Cui, Yutian
AU - Chinthavali, Madhu
AU - Tolbert, Leon M.
PY - 2012
Y1 - 2012
N2 - This paper provides a behavioral model in Pspice for a silicon carbide (SiC) power MOSFET rated at 1200 V / 30 A for a wide temperature range. The Pspice model was built using device parameters extracted through experiment. The static and dynamic behavior of the SiC power MOSFET is simulated and compared to the measured data to show the accuracy of the Pspice model. The temperature dependent behavior was simulated and analyzed. Also, the effect of the parasitics of the circuit on switching behavior was simulated and discussed.
AB - This paper provides a behavioral model in Pspice for a silicon carbide (SiC) power MOSFET rated at 1200 V / 30 A for a wide temperature range. The Pspice model was built using device parameters extracted through experiment. The static and dynamic behavior of the SiC power MOSFET is simulated and compared to the measured data to show the accuracy of the Pspice model. The temperature dependent behavior was simulated and analyzed. Also, the effect of the parasitics of the circuit on switching behavior was simulated and discussed.
UR - http://www.scopus.com/inward/record.url?scp=84860169366&partnerID=8YFLogxK
U2 - 10.1109/APEC.2012.6166050
DO - 10.1109/APEC.2012.6166050
M3 - Conference contribution
AN - SCOPUS:84860169366
SN - 9781457712159
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 1698
EP - 1704
BT - APEC 2012 - 27th Annual IEEE Applied Power Electronics Conference and Exposition
T2 - 27th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2012
Y2 - 5 February 2012 through 9 February 2012
ER -