Temperature-dependent characterization of SiC power electronic devices

Madhu Sudhan Chinthavali; Burak Ozpineci; Leon M. Tolbert

Temperature-dependent characterization of SiC power electronic devices

Madhu Sudhan Chinthavali, Burak Ozpineci, Leon M. Tolbert

Buildings and Transportation Science Div

Research output: Contribution to conference › Paper › peer-review

19 Scopus citations

Abstract

Silicon (Si) unipolar devices are limited in breakdown voltages because of the low electric field strength of the material. Silicon carbide (SiC) unipolar devices, on the other hand, have 10 times greater electric field strength and hence they have much higher breakdown voltages compared with Si. They also have low static and dynamic losses compared with Si devices. Four commercially available SiC Schottky diodes at different voltage and current ratings and an experimental SIC VJFET sample have been tested to characterize their performance at different temperatures. Their forward characteristics and switching characteristics in a temperature range of -50°C to 175°C are presented. The results for the SiC Schottky diodes are compared with the results for a Si pn diode with comparable ratings. The experimental data were analyzed to obtain the device performance parameters like the on-state resistance and the switching losses.

Original language	English
Pages	43-47
Number of pages	5
State	Published - 2004
Event	8th IEEE Workshop on Power Electronics in Transportation, WPET - Novi, MI, United States Duration: Oct 21 2004 → Oct 22 2004

Conference

Conference	8th IEEE Workshop on Power Electronics in Transportation, WPET
Country/Territory	United States
City	Novi, MI
Period	10/21/04 → 10/22/04

Cite this

@conference{ca5b4d68d6fd43818d02bc07590ee47a,

title = "Temperature-dependent characterization of SiC power electronic devices",

abstract = "Silicon (Si) unipolar devices are limited in breakdown voltages because of the low electric field strength of the material. Silicon carbide (SiC) unipolar devices, on the other hand, have 10 times greater electric field strength and hence they have much higher breakdown voltages compared with Si. They also have low static and dynamic losses compared with Si devices. Four commercially available SiC Schottky diodes at different voltage and current ratings and an experimental SIC VJFET sample have been tested to characterize their performance at different temperatures. Their forward characteristics and switching characteristics in a temperature range of -50°C to 175°C are presented. The results for the SiC Schottky diodes are compared with the results for a Si pn diode with comparable ratings. The experimental data were analyzed to obtain the device performance parameters like the on-state resistance and the switching losses.",

author = "Chinthavali, {Madhu Sudhan} and Burak Ozpineci and Tolbert, {Leon M.}",

year = "2004",

language = "English",

pages = "43--47",

note = "8th IEEE Workshop on Power Electronics in Transportation, WPET ; Conference date: 21-10-2004 Through 22-10-2004",

}

TY - CONF

T1 - Temperature-dependent characterization of SiC power electronic devices

AU - Chinthavali, Madhu Sudhan

AU - Ozpineci, Burak

AU - Tolbert, Leon M.

PY - 2004

Y1 - 2004

N2 - Silicon (Si) unipolar devices are limited in breakdown voltages because of the low electric field strength of the material. Silicon carbide (SiC) unipolar devices, on the other hand, have 10 times greater electric field strength and hence they have much higher breakdown voltages compared with Si. They also have low static and dynamic losses compared with Si devices. Four commercially available SiC Schottky diodes at different voltage and current ratings and an experimental SIC VJFET sample have been tested to characterize their performance at different temperatures. Their forward characteristics and switching characteristics in a temperature range of -50°C to 175°C are presented. The results for the SiC Schottky diodes are compared with the results for a Si pn diode with comparable ratings. The experimental data were analyzed to obtain the device performance parameters like the on-state resistance and the switching losses.

AB - Silicon (Si) unipolar devices are limited in breakdown voltages because of the low electric field strength of the material. Silicon carbide (SiC) unipolar devices, on the other hand, have 10 times greater electric field strength and hence they have much higher breakdown voltages compared with Si. They also have low static and dynamic losses compared with Si devices. Four commercially available SiC Schottky diodes at different voltage and current ratings and an experimental SIC VJFET sample have been tested to characterize their performance at different temperatures. Their forward characteristics and switching characteristics in a temperature range of -50°C to 175°C are presented. The results for the SiC Schottky diodes are compared with the results for a Si pn diode with comparable ratings. The experimental data were analyzed to obtain the device performance parameters like the on-state resistance and the switching losses.

UR - http://www.scopus.com/inward/record.url?scp=17744365751&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:17744365751

SP - 43

EP - 47

T2 - 8th IEEE Workshop on Power Electronics in Transportation, WPET

Y2 - 21 October 2004 through 22 October 2004

ER -

Temperature-dependent characterization of SiC power electronic devices

Abstract

Conference

Other files and links

Fingerprint

Cite this