Temperature dependence of radiation damage and its annealing in silicon detectors

H. J. Ziock; J. G. Boissevain; K. Holzscheiter; J. S. Kapustinsky; A. P.T. Palounek; W. E. Sondheim; E. Barberis; N. Cartiglia; J. Leslie; D. Pitzl; W. A. Rowe; H. F.W. Sadrozinski; A. Seiden; E. Spencer; M. Wilder; J. A. Ellison; J. K. Fleming; S. Jerger; D. Joyce; C. Lietzke; E. Reed; S. J. Wimpenny; P. Ferguson; M. A. Frautschi; J. A.J. Matthews; D. Skinner

doi:10.1109/23.256577

Temperature dependence of radiation damage and its annealing in silicon detectors

H. J. Ziock, J. G. Boissevain, K. Holzscheiter, J. S. Kapustinsky, A. P.T. Palounek, W. E. Sondheim, E. Barberis, N. Cartiglia, J. Leslie, D. Pitzl, W. A. Rowe, H. F.W. Sadrozinski, A. Seiden, E. Spencer, M. Wilder, J. A. Ellison, J. K. Fleming, S. Jerger, D. Joyce, C. LietzkeE. Reed, S. J. Wimpenny, P. Ferguson, M. A. Frautschi, J. A.J. Matthews, D. Skinner

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Abstract

The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider will induce significant leakage currents in silicon detectors. In order to limit those currents, we plan to operate the detectors at reduced temperatures (~0° C). In this paper, we present the results of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in silicon PIN detectors. Depletion voltage results are reported. The detectors were exposed to approximately 10¹⁴/cm² 650 MeV protons. Very pronounced temperature dependencies were observed.

Original language	English
Pages (from-to)	344-348
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	40
Issue number	4
DOIs	https://doi.org/10.1109/23.256577
State	Published - Aug 1993

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Ziock, H. J., Boissevain, J. G., Holzscheiter, K., Kapustinsky, J. S., Palounek, A. P. T., Sondheim, W. E., Barberis, E., Cartiglia, N., Leslie, J., Pitzl, D., Rowe, W. A., Sadrozinski, H. F. W., Seiden, A., Spencer, E., Wilder, M., Ellison, J. A., Fleming, J. K., Jerger, S., Joyce, D., ... Skinner, D. (1993). Temperature dependence of radiation damage and its annealing in silicon detectors. IEEE Transactions on Nuclear Science, 40(4), 344-348. https://doi.org/10.1109/23.256577

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title = "Temperature dependence of radiation damage and its annealing in silicon detectors",

abstract = "The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider will induce significant leakage currents in silicon detectors. In order to limit those currents, we plan to operate the detectors at reduced temperatures (~0° C). In this paper, we present the results of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in silicon PIN detectors. Depletion voltage results are reported. The detectors were exposed to approximately 1014/cm2 650 MeV protons. Very pronounced temperature dependencies were observed.",

author = "Ziock, {H. J.} and Boissevain, {J. G.} and K. Holzscheiter and Kapustinsky, {J. S.} and Palounek, {A. P.T.} and Sondheim, {W. E.} and E. Barberis and N. Cartiglia and J. Leslie and D. Pitzl and Rowe, {W. A.} and Sadrozinski, {H. F.W.} and A. Seiden and E. Spencer and M. Wilder and Ellison, {J. A.} and Fleming, {J. K.} and S. Jerger and D. Joyce and C. Lietzke and E. Reed and Wimpenny, {S. J.} and P. Ferguson and Frautschi, {M. A.} and Matthews, {J. A.J.} and D. Skinner",

year = "1993",

month = aug,

doi = "10.1109/23.256577",

language = "English",

volume = "40",

pages = "344--348",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

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Ziock, HJ, Boissevain, JG, Holzscheiter, K, Kapustinsky, JS, Palounek, APT, Sondheim, WE, Barberis, E, Cartiglia, N, Leslie, J, Pitzl, D, Rowe, WA, Sadrozinski, HFW, Seiden, A, Spencer, E, Wilder, M, Ellison, JA, Fleming, JK, Jerger, S, Joyce, D, Lietzke, C, Reed, E, Wimpenny, SJ, Ferguson, P, Frautschi, MA, Matthews, JAJ & Skinner, D 1993, 'Temperature dependence of radiation damage and its annealing in silicon detectors', IEEE Transactions on Nuclear Science, vol. 40, no. 4, pp. 344-348. https://doi.org/10.1109/23.256577

TY - JOUR

T1 - Temperature dependence of radiation damage and its annealing in silicon detectors

AU - Ziock, H. J.

AU - Boissevain, J. G.

AU - Holzscheiter, K.

AU - Kapustinsky, J. S.

AU - Palounek, A. P.T.

AU - Sondheim, W. E.

AU - Barberis, E.

AU - Cartiglia, N.

AU - Leslie, J.

AU - Pitzl, D.

AU - Rowe, W. A.

AU - Sadrozinski, H. F.W.

AU - Seiden, A.

AU - Spencer, E.

AU - Wilder, M.

AU - Ellison, J. A.

AU - Fleming, J. K.

AU - Jerger, S.

AU - Joyce, D.

AU - Lietzke, C.

AU - Reed, E.

AU - Wimpenny, S. J.

AU - Ferguson, P.

AU - Frautschi, M. A.

AU - Matthews, J. A.J.

AU - Skinner, D.

PY - 1993/8

Y1 - 1993/8

N2 - The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider will induce significant leakage currents in silicon detectors. In order to limit those currents, we plan to operate the detectors at reduced temperatures (~0° C). In this paper, we present the results of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in silicon PIN detectors. Depletion voltage results are reported. The detectors were exposed to approximately 1014/cm2 650 MeV protons. Very pronounced temperature dependencies were observed.

AB - The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider will induce significant leakage currents in silicon detectors. In order to limit those currents, we plan to operate the detectors at reduced temperatures (~0° C). In this paper, we present the results of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in silicon PIN detectors. Depletion voltage results are reported. The detectors were exposed to approximately 1014/cm2 650 MeV protons. Very pronounced temperature dependencies were observed.

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U2 - 10.1109/23.256577

DO - 10.1109/23.256577

M3 - Article

AN - SCOPUS:0027644411

SN - 0018-9499

VL - 40

SP - 344

EP - 348

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 4

ER -

Temperature dependence of radiation damage and its annealing in silicon detectors

Abstract

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