Abstract
The temperature dependence of gain in InGaAs multi-stacked quantum dots (QDs) laser investigated and compared with InGaAs single quantum well (SQW) laser. It was found that quantum dots laser showed a much better stability of gain on temperature. The gain in InGaAs QDs increases with temperature in the region from 140 K to 200 K. Beyond 200 K the gain decreases with increasing temperature. The mechanism for the above gain characteristics was analyzed. The gain peak wavelength moves to longer wavelength range with increasing temperature and exhibits a better temperature stability compared with quantum well laser.
| Original language | English |
|---|---|
| Pages (from-to) | 285-288 |
| Number of pages | 4 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 21 |
| Issue number | 4 |
| State | Published - Aug 2002 |
| Externally published | Yes |
Keywords
- Optical gain
- Quantum dots
- Temperature dependence