Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOX barriers

T. Newhouse-Illige; Y. H. Xu; Y. H. Liu; S. Huang; H. Kato; C. Bi; M. Xu; B. J. Leroy; W. G. Wang

doi:10.1063/1.5002586

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdO_X barriers

T. Newhouse-Illige, Y. H. Xu, Y. H. Liu, S. Huang, H. Kato, C. Bi, M. Xu, B. J. Leroy, W. G. Wang

STS Project Technical Systems

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Perpendicular magnetic tunnel junctions with GdO_X tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdO_X barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlO_X and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

Original language	English
Article number	072404
Journal	Applied Physics Letters
Volume	112
Issue number	7
DOIs	https://doi.org/10.1063/1.5002586
State	Published - Feb 12 2018

Funding

This work was supported in part by C-SPIN, one of the six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, and by the National Science Foundation through ECCS-1554011 and ECCS-1607911. Work at ORNL was supported by the Division of Scientific User Facilities of the Office of Basic Energy Sciences (BES), U.S. Department of Energy (DOE). All Cypher AFM images and data were collected in the W.M. Keck Center for Nano-Scale Imaging in the Department of Chemistry and Biochemistry at the University of Arizona. This material is based upon work supported by the National Science Foundation under Grant No. 1337371.

Funders	Funder number
Division of Scientific
Office of Basic Energy Sciences
National Science Foundation	ECCS-1554011, ECCS-1607911, 1337371, 1554011
U.S. Department of Energy
Defense Advanced Research Projects Agency
Basic Energy Sciences
Microelectronics Advanced Research Corporation
University of Arizona
National Science Foundation

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abstract = "Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.",

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AU - Newhouse-Illige, T.

AU - Xu, Y. H.

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AU - Kato, H.

AU - Bi, C.

AU - Xu, M.

AU - Leroy, B. J.

AU - Wang, W. G.

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AB - Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

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Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdO_X barriers

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