Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique

Masayoshi Adachi; Sonoko Hamaya; Daisuke Morikawa; Benjamin G. Pierce; Ahmad M. Karimi; Yuji Yamagata; Kenji Tsuda; Roger H. French; Hiroyuki Fukuyama

doi:10.1016/j.mssp.2022.107167

Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique

Masayoshi Adachi, Sonoko Hamaya, Daisuke Morikawa, Benjamin G. Pierce, Ahmad M. Karimi, Yuji Yamagata, Kenji Tsuda, Roger H. French, Hiroyuki Fukuyama

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Bulk AlN single crystal has a great demand as a substrate material for AlGaN-based optical and electronic devices such as deep ultraviolet light-emitting diodes and high-power transistors. We have previously proposed a novel solution-growth method using Ni–Al solution with an in-situ observation system for solution growth of AlN crystal using electromagnetic levitation. In this paper, to investigate AlN formation behavior on 40 mol%Al–Ni droplets, two precisely synchronized high-speed cameras from the horizontal and vertical directions were installed. AlN formation behavior was evaluated quantitatively using computer vision image processing techniques. Based on the results, we demonstrated the growth of thick AlN film at 2030 K for 1 h. A 3.8-μm-thick c-axis oriented AlN film successfully formed on the droplet, and the film was also oriented in-plane. The + c-direction AlN film grew towards the droplet center from the surface by reacting dissolved nitrogen and Al atoms.

Original language	English
Article number	107167
Journal	Materials Science in Semiconductor Processing
Volume	153
DOIs	https://doi.org/10.1016/j.mssp.2022.107167
State	Published - Jan 2023
Externally published	Yes

Funding

This work was supported by JSPS KAKENHI Grant Numbers 20H02633 and 20K21071 . The research was performed at the SDLE Research Center, which was established through funding by the Ohio Third Frontier, Wright Project Program Award tech 12–004. This work made use of the High Performance Computing Resource in the Core Facility for Advanced Research Computing at Case Western Reserve University.

Funders	Funder number
Japan Society for the Promotion of Science	20H02633, 20K21071

Keywords

Aluminum nitride
Computer vision image processing
In-situ observation
Solution growth
Thermodynamics

Access to Document

10.1016/j.mssp.2022.107167

Cite this

Adachi, M., Hamaya, S., Morikawa, D., Pierce, B. G., Karimi, A. M., Yamagata, Y., Tsuda, K., French, R. H., & Fukuyama, H. (2023). Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique. Materials Science in Semiconductor Processing, 153, Article 107167. https://doi.org/10.1016/j.mssp.2022.107167

@article{4d9de7a14f05400d8f873eeae2edda73,

title = "Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique",

abstract = "Bulk AlN single crystal has a great demand as a substrate material for AlGaN-based optical and electronic devices such as deep ultraviolet light-emitting diodes and high-power transistors. We have previously proposed a novel solution-growth method using Ni–Al solution with an in-situ observation system for solution growth of AlN crystal using electromagnetic levitation. In this paper, to investigate AlN formation behavior on 40 mol%Al–Ni droplets, two precisely synchronized high-speed cameras from the horizontal and vertical directions were installed. AlN formation behavior was evaluated quantitatively using computer vision image processing techniques. Based on the results, we demonstrated the growth of thick AlN film at 2030 K for 1 h. A 3.8-μm-thick c-axis oriented AlN film successfully formed on the droplet, and the film was also oriented in-plane. The + c-direction AlN film grew towards the droplet center from the surface by reacting dissolved nitrogen and Al atoms.",

keywords = "Aluminum nitride, Computer vision image processing, In-situ observation, Solution growth, Thermodynamics",

author = "Masayoshi Adachi and Sonoko Hamaya and Daisuke Morikawa and Pierce, {Benjamin G.} and Karimi, {Ahmad M.} and Yuji Yamagata and Kenji Tsuda and French, {Roger H.} and Hiroyuki Fukuyama",

note = "Publisher Copyright: {\textcopyright} 2022 The Authors",

year = "2023",

month = jan,

doi = "10.1016/j.mssp.2022.107167",

language = "English",

volume = "153",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier",

}

TY - JOUR

T1 - Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique

AU - Adachi, Masayoshi

AU - Hamaya, Sonoko

AU - Morikawa, Daisuke

AU - Pierce, Benjamin G.

AU - Karimi, Ahmad M.

AU - Yamagata, Yuji

AU - Tsuda, Kenji

AU - French, Roger H.

AU - Fukuyama, Hiroyuki

PY - 2023/1

Y1 - 2023/1

N2 - Bulk AlN single crystal has a great demand as a substrate material for AlGaN-based optical and electronic devices such as deep ultraviolet light-emitting diodes and high-power transistors. We have previously proposed a novel solution-growth method using Ni–Al solution with an in-situ observation system for solution growth of AlN crystal using electromagnetic levitation. In this paper, to investigate AlN formation behavior on 40 mol%Al–Ni droplets, two precisely synchronized high-speed cameras from the horizontal and vertical directions were installed. AlN formation behavior was evaluated quantitatively using computer vision image processing techniques. Based on the results, we demonstrated the growth of thick AlN film at 2030 K for 1 h. A 3.8-μm-thick c-axis oriented AlN film successfully formed on the droplet, and the film was also oriented in-plane. The + c-direction AlN film grew towards the droplet center from the surface by reacting dissolved nitrogen and Al atoms.

AB - Bulk AlN single crystal has a great demand as a substrate material for AlGaN-based optical and electronic devices such as deep ultraviolet light-emitting diodes and high-power transistors. We have previously proposed a novel solution-growth method using Ni–Al solution with an in-situ observation system for solution growth of AlN crystal using electromagnetic levitation. In this paper, to investigate AlN formation behavior on 40 mol%Al–Ni droplets, two precisely synchronized high-speed cameras from the horizontal and vertical directions were installed. AlN formation behavior was evaluated quantitatively using computer vision image processing techniques. Based on the results, we demonstrated the growth of thick AlN film at 2030 K for 1 h. A 3.8-μm-thick c-axis oriented AlN film successfully formed on the droplet, and the film was also oriented in-plane. The + c-direction AlN film grew towards the droplet center from the surface by reacting dissolved nitrogen and Al atoms.

KW - Aluminum nitride

KW - Computer vision image processing

KW - In-situ observation

KW - Solution growth

KW - Thermodynamics

UR - http://www.scopus.com/inward/record.url?scp=85140626919&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2022.107167

DO - 10.1016/j.mssp.2022.107167

M3 - Article

AN - SCOPUS:85140626919

SN - 1369-8001

VL - 153

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 107167

ER -

Temperature dependence of crystal growth behavior of AlN on Ni–Al using electromagnetic levitation and computer vision technique

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this