Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys

Amey Apte; Aravind Krishnamoorthy; Jordan Adam Hachtel; Sandhya Susarla; Juan Carlos Idrobo; Aiichiro Nakano; Rajiv K. Kalia; Priya Vashishta; Chandra Sekhar Tiwary; Pulickel M. Ajayan

doi:10.1021/acs.chemmater.8b03444

Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys

Amey Apte, Aravind Krishnamoorthy, Jordan Adam Hachtel, Sandhya Susarla, Juan Carlos Idrobo, Aiichiro Nakano, Rajiv K. Kalia, Priya Vashishta, Chandra Sekhar Tiwary, Pulickel M. Ajayan

electron Microscopy and Microanalysis

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Alloying in two-dimensional (2D) transition metal dichalcogenides (TMDCs) has allowed band gap engineering and phase transformation, as well as modulation of electronic properties. However, most of the efforts have been focused on alloying between transition metal cations. Among those that emphasize alloying between chalcogenide anions, the sulfide-selenide combinations are popular with a few reports on selenide-telluride combinations. In this work, we show a facile chemical vapor deposition method to obtain stable alloying between selenide and telluride anions in monolayer MoSe_2(1-x)Te_2x alloy. These alloys retain the monolayer 2H symmetry and show good photoluminescence and band gap tunability in the near-infrared region. The nature and percentage of alloying is further confirmed and quantified via AFM, XPS, and HAADF-STEM imaging and polarized Raman spectroscopy. The stability of the two chalcogens in the monolayer 2H lattice is also consistent with thermodynamic phase mixing via DFT simulations. The work demonstrates a straightforward method of synthesizing telluride-based 2D TMDC alloys for further studies and emerging applications.

Original language	English
Pages (from-to)	7262-7268
Number of pages	7
Journal	Chemistry of Materials
Volume	30
Issue number	20
DOIs	https://doi.org/10.1021/acs.chemmater.8b03444
State	Published - Oct 23 2018

Funding

This work was supported by the Computational Materials Sciences Program funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award No. DESC0014607. Microscopy research was performed as part of a user proposal at Oak Ridge National Laboratory’s Center for Nanophase Materials Sciences (CNMS), which is a U.S. Department of Energy, Office of Science User Facility (J.A.H. and J.C.I.). C.S.T. acknowledges Ramanujan fellowship. This work was supported by the Computational Materials Sciences Program funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award No. DE-SC0014607. Microscopy research was performed as part of a user proposal at Oak Ridge National Laboratory's Center for Nanophase Materials Sciences (CNMS), which is a U.S. Department of Energy, Office of Science User Facility (J.A.H. and J.C.I.). C.S.T. acknowledges Ramanujan fellowship.

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title = "Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys",

abstract = "Alloying in two-dimensional (2D) transition metal dichalcogenides (TMDCs) has allowed band gap engineering and phase transformation, as well as modulation of electronic properties. However, most of the efforts have been focused on alloying between transition metal cations. Among those that emphasize alloying between chalcogenide anions, the sulfide-selenide combinations are popular with a few reports on selenide-telluride combinations. In this work, we show a facile chemical vapor deposition method to obtain stable alloying between selenide and telluride anions in monolayer MoSe2(1-x)Te2x alloy. These alloys retain the monolayer 2H symmetry and show good photoluminescence and band gap tunability in the near-infrared region. The nature and percentage of alloying is further confirmed and quantified via AFM, XPS, and HAADF-STEM imaging and polarized Raman spectroscopy. The stability of the two chalcogens in the monolayer 2H lattice is also consistent with thermodynamic phase mixing via DFT simulations. The work demonstrates a straightforward method of synthesizing telluride-based 2D TMDC alloys for further studies and emerging applications.",

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AU - Susarla, Sandhya

AU - Idrobo, Juan Carlos

AU - Nakano, Aiichiro

AU - Kalia, Rajiv K.

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AU - Tiwary, Chandra Sekhar

AU - Ajayan, Pulickel M.

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N2 - Alloying in two-dimensional (2D) transition metal dichalcogenides (TMDCs) has allowed band gap engineering and phase transformation, as well as modulation of electronic properties. However, most of the efforts have been focused on alloying between transition metal cations. Among those that emphasize alloying between chalcogenide anions, the sulfide-selenide combinations are popular with a few reports on selenide-telluride combinations. In this work, we show a facile chemical vapor deposition method to obtain stable alloying between selenide and telluride anions in monolayer MoSe2(1-x)Te2x alloy. These alloys retain the monolayer 2H symmetry and show good photoluminescence and band gap tunability in the near-infrared region. The nature and percentage of alloying is further confirmed and quantified via AFM, XPS, and HAADF-STEM imaging and polarized Raman spectroscopy. The stability of the two chalcogens in the monolayer 2H lattice is also consistent with thermodynamic phase mixing via DFT simulations. The work demonstrates a straightforward method of synthesizing telluride-based 2D TMDC alloys for further studies and emerging applications.

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Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys

Abstract

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