Abstract
The development of robust and efficient single-photon emitters (SPEs) at telecom wavelengths is critical for advancements in quantum information science. Two-dimensional (2D) materials have recently emerged as promising sources for SPEs, owing to their high photon extraction efficiency, facile coupling to external fields, and seamless integration into photonic circuits. In this study, we demonstrate the creation of SPEs emitting in the 1000-1550 nm near-infrared range by coupling 2D indium selenide (InSe) with strain-inducing nanopillar arrays. The emission wavelength exhibits a strong dependence on the number of layers. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching, confirming the single-photon nature of the emissions. Density-functional-theory calculations and scanning-tunneling-microscopy analyses provide insights into the electronic structures and defect states, elucidating the origins of the SPEs.
| Original language | English |
|---|---|
| Pages (from-to) | 6911-6917 |
| Number of pages | 7 |
| Journal | ACS Nano |
| Volume | 19 |
| Issue number | 7 |
| DOIs | |
| State | Published - Feb 25 2025 |
Funding
The STM, DFT, data analysis, and manuscript writing were conducted at the Center for Nanophase Materials Sciences, which is a U.S. Department of Energy Office of Science User Facility. The sample preparation and optical measurements were performed at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE), Office of Science, by Los Alamos National Laboratory. H.Z., B.J.L., S.J., A.-P.L., and H.H. acknowledge the support by Quantum Science Center, a National Quantum Information Science Research Center supported by Office of Science, U.S. DOE. H.Z. was also supported in part by Wigner Distinguished Staff Fellowship at the Oak Ridge National Laboratory. L.L. acknowledges computational resources of the Compute and Data Environment for Science (CADES) at the Oak Ridge National Laboratory, which is supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC05-00OR22725. J.C. and X.Y. acknowledge the support by Army Research Office under grant No. W911NF2410080. This manuscript has been authored by UT-Battelle, LLC, under Contract No. DE-AC0500OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (https://energy.gov/downloads/doe-public-access-plan).
Keywords
- 2D Material
- Defect
- Indium Selenide
- Single-Photon Emitter
- Strain Engineering