Abstract
Numerical simulations were performed using the Sentaurus TCAD software package on a GaN Schottky diode radiation detector. The strong agreement between simulated and measured charge collection efficiency indicates that all of the major parameters and physics models are included in our code. The transient current components from the depletion region and undepleted region have been deconvoluted. The simulation results indicate that for Schottky diodes fabricated on a moderately doped GaN semiconductor, the drift current component is the major contribution to the collected charges.
Original language | English |
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Pages (from-to) | 167-169 |
Number of pages | 3 |
Journal | Transactions of the American Nuclear Society |
Volume | 110 |
State | Published - 2014 |
Externally published | Yes |
Event | 2014 Annual Meeting on Transactions of the American Nuclear Society and Embedded Topical Meeting: Nuclear Fuels and Structural Materials for the Next Generation Nuclear Reactors, NSFM 2014 - Reno, NV, United States Duration: Jun 15 2014 → Jun 19 2014 |