Tailoring Interlayer Coupling in Few-Layer MoS2 with Stacking Configuration

Jong Hun Kim; Kyung Hwan Jin; Yeonjoon Jung; Gwan Hyoung Lee; Jaeyoon Baik; Daehyun Kim; Moon Ho Jo; Arthur P. Baddorf; An Ping Li; Jewook Park

doi:10.1021/acsanm.4c02834

Tailoring Interlayer Coupling in Few-Layer MoS₂ with Stacking Configuration

Jong Hun Kim
, Kyung Hwan Jin
, Yeonjoon Jung
, Gwan Hyoung Lee
, Jaeyoon Baik
, Daehyun Kim
, Moon Ho Jo
, Arthur P. Baddorf
, An Ping Li
, Jewook Park

Scanning Tunneling Microscopy Group

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We manipulated the stacking configuration of a few-layer MoS₂ to investigate the impact of interlayer coupling on electrical band engineering. By simultaneously synthesizing two distinct stacking types of MoS₂ islands, wedding cake (W) and spiral (S), on the same substrate, we explored layer-dependent electrical properties under identical experimental conditions. We used multiple scanning probe microscopy techniques to map local electronic properties with respect to the number of layers, stacking configurations, and local heterogeneities. First-principles calculations verified the role of distinct interlayer coupling in terms of the interlayer distance. Our findings highlight the critical role of interlayer coupling in applications of transition metal dichalcogenides.

Original language	English
Pages (from-to)	17214-17220
Number of pages	7
Journal	ACS Applied Nano Materials
Volume	7
Issue number	15
DOIs	https://doi.org/10.1021/acsanm.4c02834
State	Published - Aug 9 2024

Funding

This work was supported by the Institute for Basic Science (IBS-R014-A1, IBS-R034-D1, IBS-R014-Y1). J.H.K acknowledges the support from Inha University. G.H.L acknowledges the support from the Technology Innovation Program (RS-2023-00301731) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). K.-H.J. is supported by research funds for newly appointed professors of Jeonbuk National University in 2024. J.B. and D.K. acknowledge the SPEM experiment using the 8A1 beamline of the Pohang Accelerator Laboratory. STM experiments were conducted while J.P. was at the Institute for Basic Science. Portions of the analysis and document preparation of the research was supported by the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy, Office of Science, User Facility at Oak Ridge National Laboratory.

Keywords

Interlayer coupling
Kelvin probe microscopy
density functional theory
electrical bandgap
local density of states
scanning tunneling microscopy and spectroscopy
transition metal dichalcogenides

Access to Document

10.1021/acsanm.4c02834

Cite this

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abstract = "We manipulated the stacking configuration of a few-layer MoS2 to investigate the impact of interlayer coupling on electrical band engineering. By simultaneously synthesizing two distinct stacking types of MoS2 islands, wedding cake (W) and spiral (S), on the same substrate, we explored layer-dependent electrical properties under identical experimental conditions. We used multiple scanning probe microscopy techniques to map local electronic properties with respect to the number of layers, stacking configurations, and local heterogeneities. First-principles calculations verified the role of distinct interlayer coupling in terms of the interlayer distance. Our findings highlight the critical role of interlayer coupling in applications of transition metal dichalcogenides.",

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AU - Baik, Jaeyoon

AU - Kim, Daehyun

AU - Jo, Moon Ho

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