Systematic annealing of free-standing ge nanoparticles in H2/Ar (%5/%95) gas medium

Ali Karatutlu; Ali Karatutlu; Osman Ersoy; William R. Little; Yuanpeng Zhang; Andrei V. Sapelkin

Systematic annealing of free-standing ge nanoparticles in H₂/Ar (%5/%95) gas medium

Ali Karatutlu
, Ali Karatutlu
, Osman Ersoy
, William R. Little
, Yuanpeng Zhang
, Andrei V. Sapelkin

Research output: Contribution to journal › Conference article › peer-review

Abstract

Free-standing Ge nanoparticles about 3 nm in size were formed using a facile colloidal synthesis method. The effect of systematic annealing in H₂/Ar (%5/%95) gas medium on morphology and structure of the free-standing Ge nanoparticles was investigated using transmission electron microscopy and selective area electron diffraction techniques. We showed that upon annealing in H₂/Ar (%5/%95) gas medium, the size of Ge nanoparticles can be controlled and some exotic phases such as β-Sn II phase and 4H-Ge phase seem to be formed. To our knowledge, free-standing Ge nanoparticles in 4H-Ge phase was demonstrated for the first time.

Original language	English
Article number	386
Journal	Proceedings of the World Congress on New Technologies
State	Published - 2015
Externally published	Yes
Event	World Congress on New Technologies, NewTech 2015 - Barcelona, Spain Duration: Jul 15 2015 → Jul 17 2015

Keywords

4H-Ge phase
Annealing
Germanium nanoparticles
Morphology
Structure

Cite this

@article{825b3ec2d0ca42a6b2ce73a9b517a2d2,

title = "Systematic annealing of free-standing ge nanoparticles in H2/Ar (\%5/\%95) gas medium",

abstract = "Free-standing Ge nanoparticles about 3 nm in size were formed using a facile colloidal synthesis method. The effect of systematic annealing in H2/Ar (\%5/\%95) gas medium on morphology and structure of the free-standing Ge nanoparticles was investigated using transmission electron microscopy and selective area electron diffraction techniques. We showed that upon annealing in H2/Ar (\%5/\%95) gas medium, the size of Ge nanoparticles can be controlled and some exotic phases such as β-Sn II phase and 4H-Ge phase seem to be formed. To our knowledge, free-standing Ge nanoparticles in 4H-Ge phase was demonstrated for the first time.",

keywords = "4H-Ge phase, Annealing, Germanium nanoparticles, Morphology, Structure",

author = "Ali Karatutlu and Ali Karatutlu and Osman Ersoy and Little, \{William R.\} and Yuanpeng Zhang and Sapelkin, \{Andrei V.\}",

year = "2015",

language = "English",

journal = "Proceedings of the World Congress on New Technologies",

issn = "2369-8128",

}

TY - JOUR

T1 - Systematic annealing of free-standing ge nanoparticles in H2/Ar (%5/%95) gas medium

AU - Karatutlu, Ali

AU - Ersoy, Osman

AU - Little, William R.

AU - Zhang, Yuanpeng

AU - Sapelkin, Andrei V.

PY - 2015

Y1 - 2015

N2 - Free-standing Ge nanoparticles about 3 nm in size were formed using a facile colloidal synthesis method. The effect of systematic annealing in H2/Ar (%5/%95) gas medium on morphology and structure of the free-standing Ge nanoparticles was investigated using transmission electron microscopy and selective area electron diffraction techniques. We showed that upon annealing in H2/Ar (%5/%95) gas medium, the size of Ge nanoparticles can be controlled and some exotic phases such as β-Sn II phase and 4H-Ge phase seem to be formed. To our knowledge, free-standing Ge nanoparticles in 4H-Ge phase was demonstrated for the first time.

AB - Free-standing Ge nanoparticles about 3 nm in size were formed using a facile colloidal synthesis method. The effect of systematic annealing in H2/Ar (%5/%95) gas medium on morphology and structure of the free-standing Ge nanoparticles was investigated using transmission electron microscopy and selective area electron diffraction techniques. We showed that upon annealing in H2/Ar (%5/%95) gas medium, the size of Ge nanoparticles can be controlled and some exotic phases such as β-Sn II phase and 4H-Ge phase seem to be formed. To our knowledge, free-standing Ge nanoparticles in 4H-Ge phase was demonstrated for the first time.

KW - 4H-Ge phase

KW - Annealing

KW - Germanium nanoparticles

KW - Morphology

KW - Structure

UR - https://www.scopus.com/pages/publications/85100802125

M3 - Conference article

AN - SCOPUS:85100802125

SN - 2369-8128

JO - Proceedings of the World Congress on New Technologies

JF - Proceedings of the World Congress on New Technologies

M1 - 386

T2 - World Congress on New Technologies, NewTech 2015

Y2 - 15 July 2015 through 17 July 2015

ER -

Systematic annealing of free-standing ge nanoparticles in H₂/Ar (%5/%95) gas medium

Abstract

Keywords

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