Systematic annealing of free-standing ge nanoparticles in H2/Ar (%5/%95) gas medium

Ali Karatutlu, Ali Karatutlu, Osman Ersoy, William R. Little, Yuanpeng Zhang, Andrei V. Sapelkin

Research output: Contribution to journalConference articlepeer-review

Abstract

Free-standing Ge nanoparticles about 3 nm in size were formed using a facile colloidal synthesis method. The effect of systematic annealing in H2/Ar (%5/%95) gas medium on morphology and structure of the free-standing Ge nanoparticles was investigated using transmission electron microscopy and selective area electron diffraction techniques. We showed that upon annealing in H2/Ar (%5/%95) gas medium, the size of Ge nanoparticles can be controlled and some exotic phases such as β-Sn II phase and 4H-Ge phase seem to be formed. To our knowledge, free-standing Ge nanoparticles in 4H-Ge phase was demonstrated for the first time.

Original languageEnglish
Article number386
JournalProceedings of the World Congress on New Technologies
StatePublished - 2015
Externally publishedYes
EventWorld Congress on New Technologies, NewTech 2015 - Barcelona, Spain
Duration: Jul 15 2015Jul 17 2015

Bibliographical note

Publisher Copyright:
© 2015, Avestia Publishing. All rights reserved.

Keywords

  • 4H-Ge phase
  • Annealing
  • Germanium nanoparticles
  • Morphology
  • Structure

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