System impact of silicon carbide power devices

Burak Ozpineci; Leon M. Tolbert; Syed K. Islam; Md Hasanuzzaman

doi:10.1142/S0129156402001368

System impact of silicon carbide power devices

Burak Ozpineci, Leon M. Tolbert, Syed K. Islam, Md Hasanuzzaman

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvements in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL) including SiC device design and system modeling studies, will be given.

Original language	English
Pages (from-to)	439-448
Number of pages	10
Journal	International Journal of High Speed Electronics and Systems
Volume	12
Issue number	2
DOIs	https://doi.org/10.1142/S0129156402001368
State	Published - Jun 2002
Externally published	Yes

Funding

This project is supported by ORNL and the U.S. Department of Energy's Office of Transportation Technology Freedom Car Research Program. The authors would like to thank Michael Krach and Michael Brandt from Infineon Technologies AG for supplying the SiC Schottky diode samples, and Mustafa Saglam from the Technical University of Darmstadt for contacting them about the samples. The authors also would like to thank Dr. O. W. Holland of ORNL for providing SiC samples and Dr. F.C. Jain of the University of Connecticut for providing facilities and assistance for material processing, fabrication, and testing of SiC diodes. The submitted manuscript has been authored by a contractor of the U.S. Government under Contract No. DE-AC05-00OR22725. Accordingly, the U.S. Government retains a non-exclusive, royalty-free license to publish from the contribution, or allow the others to do so, for U.S. Government purposes.

Funders	Funder number
U.S. Government	DE-AC05-00OR22725
U.S. Department of Energy
Oak Ridge National Laboratory

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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System impact of silicon carbide power devices

Abstract

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UN SDGs

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