Synthesis of Novel Phases in Si Nanowires Using Diamond Anvil Cells at High Pressures and Temperatures

Larissa Q. Huston; Alois Lugstein; Guoyin Shen; David A. Cullen; Bianca Haberl; Jim S. Williams; Jodie E. Bradby

doi:10.1021/acs.nanolett.0c04354

Synthesis of Novel Phases in Si Nanowires Using Diamond Anvil Cells at High Pressures and Temperatures

Larissa Q. Huston
, Alois Lugstein
, Guoyin Shen
, David A. Cullen
, Bianca Haberl
, Jim S. Williams
, Jodie E. Bradby

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Silicon has several technologically promising allotropes that are formed via high-pressure synthesis. One of these phases (hd) has been predicted to have a direct band gap under tensile strain, whereas other (r8 and bc8) phases are predicted to have narrow band gaps and good absorption across the solar spectrum. Pure volumes of these phases cannot be made using conventional nanowire growth techniques. In this work, Si nanowires were compressed up to ∼20 GPa and then decompressed using a diamond anvil cell in the temperature range of 25-165 °C. It was found that at intermediate temperatures, near-phase-pure bc8-Si nanowires were produced, whereas amorphous Si (a-Si) dominated at lower temperatures, and a direct transformation to the diamond cubic phase (dc-Si) occurred at higher temperatures under compression. Thus this study has opened up a new pressure-temperature pathway for the synthesis of novel Si nanowires consisting of designed phase components with transformative properties.

Original language	English
Pages (from-to)	1427-1433
Number of pages	7
Journal	Nano Letters
Volume	21
Issue number	3
DOIs	https://doi.org/10.1021/acs.nanolett.0c04354
State	Published - Feb 10 2021

Funding

We thank Brett Johnson from the University of Melbourne for removing the Au from the nanowires. We also thank Rostislav Hrubiak, Jesse Smith, and Curtis Kenney-Benson from HPCAT for their technical assistance. We also thank Sergey Takchev for the gas loading. L.Q.H. was supported by an Australian Government Research Training Program Scholarship, and some travel support was provided by the Australian Nanotechnology Network through an Overseas Travel Fellowship. B.H. was supported by resources at the Spallation Neutron Source (SNS) and the High Flux Isotope Reactor (HFIR), DOE Office of Science User Facilities operated by the Oak Ridge National Laboratory (ORNL). We acknowledge the use of HPCAT facilities. HPCAT operations are supported by DOE-NNSA’s Office of Experimental Sciences. Use of the COMPRES-GSECARS gas loading system was supported by COMPRES under NSF Cooperative Agreement EAR-1606856 and by GSECARS through NSF grant EAR-1634415 and DOE grant DE-FG02-94ER14466. This research used resources of the Advanced Photon Source, a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under contract no. DE-AC02-06CH11357. Electron microscopy was conducted at the Center for Nanophase Materials Sciences (CNMS2017-038), which is a DOE Office of Science User Facility. We acknowledge the facilities and the scientific and technical assistance of Microscopy Australia at the Centre for Advanced Microscopy, Australian National University, a facility that is funded by the University and the Federal Government. We gratefully acknowledge financial support by the Austrian Science Fund (FWF), project no. P28175-N27 and the Australian Research Council Discovery Project Scheme (DP140102331).

Keywords

high pressure
nanowires
phase transformation
silicon

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10.1021/acs.nanolett.0c04354

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title = "Synthesis of Novel Phases in Si Nanowires Using Diamond Anvil Cells at High Pressures and Temperatures",

abstract = "Silicon has several technologically promising allotropes that are formed via high-pressure synthesis. One of these phases (hd) has been predicted to have a direct band gap under tensile strain, whereas other (r8 and bc8) phases are predicted to have narrow band gaps and good absorption across the solar spectrum. Pure volumes of these phases cannot be made using conventional nanowire growth techniques. In this work, Si nanowires were compressed up to ∼20 GPa and then decompressed using a diamond anvil cell in the temperature range of 25-165 °C. It was found that at intermediate temperatures, near-phase-pure bc8-Si nanowires were produced, whereas amorphous Si (a-Si) dominated at lower temperatures, and a direct transformation to the diamond cubic phase (dc-Si) occurred at higher temperatures under compression. Thus this study has opened up a new pressure-temperature pathway for the synthesis of novel Si nanowires consisting of designed phase components with transformative properties.",

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AU - Huston, Larissa Q.

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AU - Haberl, Bianca

AU - Williams, Jim S.

AU - Bradby, Jodie E.

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N2 - Silicon has several technologically promising allotropes that are formed via high-pressure synthesis. One of these phases (hd) has been predicted to have a direct band gap under tensile strain, whereas other (r8 and bc8) phases are predicted to have narrow band gaps and good absorption across the solar spectrum. Pure volumes of these phases cannot be made using conventional nanowire growth techniques. In this work, Si nanowires were compressed up to ∼20 GPa and then decompressed using a diamond anvil cell in the temperature range of 25-165 °C. It was found that at intermediate temperatures, near-phase-pure bc8-Si nanowires were produced, whereas amorphous Si (a-Si) dominated at lower temperatures, and a direct transformation to the diamond cubic phase (dc-Si) occurred at higher temperatures under compression. Thus this study has opened up a new pressure-temperature pathway for the synthesis of novel Si nanowires consisting of designed phase components with transformative properties.

AB - Silicon has several technologically promising allotropes that are formed via high-pressure synthesis. One of these phases (hd) has been predicted to have a direct band gap under tensile strain, whereas other (r8 and bc8) phases are predicted to have narrow band gaps and good absorption across the solar spectrum. Pure volumes of these phases cannot be made using conventional nanowire growth techniques. In this work, Si nanowires were compressed up to ∼20 GPa and then decompressed using a diamond anvil cell in the temperature range of 25-165 °C. It was found that at intermediate temperatures, near-phase-pure bc8-Si nanowires were produced, whereas amorphous Si (a-Si) dominated at lower temperatures, and a direct transformation to the diamond cubic phase (dc-Si) occurred at higher temperatures under compression. Thus this study has opened up a new pressure-temperature pathway for the synthesis of novel Si nanowires consisting of designed phase components with transformative properties.

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ER -

Synthesis of Novel Phases in Si Nanowires Using Diamond Anvil Cells at High Pressures and Temperatures

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