Synthesis of few-layer GaSe nanosheets for high performance photodetectors

Pingan Hu; Zhenzhong Wen; Lifeng Wang; Pingheng Tan; Kai Xiao

doi:10.1021/nn300889c

Synthesis of few-layer GaSe nanosheets for high performance photodetectors

Pingan Hu
, Zhenzhong Wen
, Lifeng Wang
, Pingheng Tan
, Kai Xiao

Research output: Contribution to journal › Article › peer-review

889 Scopus citations

Abstract

Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO ₂/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW ^-1 and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.

Original language	English
Pages (from-to)	5988-5994
Number of pages	7
Journal	ACS Nano
Volume	6
Issue number	7
DOIs	https://doi.org/10.1021/nn300889c
State	Published - Jul 24 2012

Keywords

gallium selenide
nanosheets
photodetectors

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10.1021/nn300889c

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title = "Synthesis of few-layer GaSe nanosheets for high performance photodetectors",

abstract = "Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO 2/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW -1 and high external quantum efficiency of 1367\% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.",

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author = "Pingan Hu and Zhenzhong Wen and Lifeng Wang and Pingheng Tan and Kai Xiao",

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T1 - Synthesis of few-layer GaSe nanosheets for high performance photodetectors

AU - Hu, Pingan

AU - Wen, Zhenzhong

AU - Wang, Lifeng

AU - Tan, Pingheng

AU - Xiao, Kai

PY - 2012/7/24

Y1 - 2012/7/24

N2 - Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO 2/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW -1 and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.

AB - Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO 2/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW -1 and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.

KW - gallium selenide

KW - nanosheets

KW - photodetectors

UR - https://www.scopus.com/pages/publications/84864195463

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M3 - Article

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SN - 1936-0851

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SP - 5988

EP - 5994

JO - ACS Nano

JF - ACS Nano

IS - 7

ER -

Synthesis of few-layer GaSe nanosheets for high performance photodetectors

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Keywords

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