Synthesis of few-layer GaSe nanosheets for high performance photodetectors

Pingan Hu; Zhenzhong Wen; Lifeng Wang; Pingheng Tan; Kai Xiao

doi:10.1021/nn300889c

Synthesis of few-layer GaSe nanosheets for high performance photodetectors

Pingan Hu, Zhenzhong Wen, Lifeng Wang, Pingheng Tan, Kai Xiao

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Article › peer-review

825 Scopus citations

Abstract

Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO ₂/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW ^-1 and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.

Original language	English
Pages (from-to)	5988-5994
Number of pages	7
Journal	ACS Nano
Volume	6
Issue number	7
DOIs	https://doi.org/10.1021/nn300889c
State	Published - Jul 24 2012

Keywords

gallium selenide
nanosheets
photodetectors

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10.1021/nn300889c

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@article{15dbc88c001e45b7b5aa41a2731005ef,

title = "Synthesis of few-layer GaSe nanosheets for high performance photodetectors",

abstract = "Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO 2/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW -1 and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.",

keywords = "gallium selenide, nanosheets, photodetectors",

author = "Pingan Hu and Zhenzhong Wen and Lifeng Wang and Pingheng Tan and Kai Xiao",

year = "2012",

month = jul,

day = "24",

doi = "10.1021/nn300889c",

language = "English",

volume = "6",

pages = "5988--5994",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Synthesis of few-layer GaSe nanosheets for high performance photodetectors

AU - Hu, Pingan

AU - Wen, Zhenzhong

AU - Wang, Lifeng

AU - Tan, Pingheng

AU - Xiao, Kai

PY - 2012/7/24

Y1 - 2012/7/24

N2 - Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO 2/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW -1 and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.

AB - Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO 2/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW -1 and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.

KW - gallium selenide

KW - nanosheets

KW - photodetectors

UR - http://www.scopus.com/inward/record.url?scp=84864195463&partnerID=8YFLogxK

U2 - 10.1021/nn300889c

DO - 10.1021/nn300889c

M3 - Article

AN - SCOPUS:84864195463

SN - 1936-0851

VL - 6

SP - 5988

EP - 5994

JO - ACS Nano

JF - ACS Nano

IS - 7

ER -

Synthesis of few-layer GaSe nanosheets for high performance photodetectors

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Keywords

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