Synthesis, crystal structure, and transport properties of Cu2.2Zn0.8SnSe4-xTex (0.1 ≤ x ≤ 0.4)

Yongkwan Dong, Brian Eckert, Hsin Wang, Xiaoyu Zeng, Terry M. Tritt, George S. Nolas

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Quaternary chalcogenides, particular compounds with the stannite structure-type, are of interest for thermoelectrics applications however tellurium-containing compositions have not been extensively investigated. We report on the synthesis and high temperature thermoelectric properties of p-type stannites Cu2.2Zn0.8SnSe4-xTex (x = 0.1, 0.2, 0.3, and 0.4). The compositions for each specimen were confirmed with a combination of Rietveld refinement and elemental analysis. Hall measurements indicate that holes are the dominant charge carriers in these materials. The electrical resistivity shows little temperature dependence up to 500 K and then increases with increasing temperature. The thermal conductivity decreases with increasing temperature with no indication of increase at higher temperatures suggesting a minimal bipolar diffusion effect in the thermal conductivity although these materials possess relatively small band-gaps as compared to that of other stannite compositions. A maximum ZT value of 0.56 was obtained at 700 K for Cu2.2Zn0.8SnSe3.7Te0.3 due to a relatively high Seebeck coefficient and low thermal conductivity.

Original languageEnglish
Pages (from-to)9014-9019
Number of pages6
JournalDalton Transactions
Volume44
Issue number19
DOIs
StatePublished - May 21 2015

Funding

FundersFunder number
National Science FoundationDMR-1400957
National Science Foundation1400957

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