Synthesis and characterization of thallium-based 1212 films with high critical current density on LaAlO3 substrates

J. Y. Lao; J. H. Wang; D. Z. Wang; S. X. Yang; Y. Tu; J. G. Wen; H. L. Wu; Z. F. Ren; D. T. Verebelyi; M. Paranthaman; T. Aytug; D. K. Christen; R. N. Bhattacharya; R. D. Blaugher

doi:10.1088/0953-2048/13/2/310

Synthesis and characterization of thallium-based 1212 films with high critical current density on LaAlO₃ substrates

J. Y. Lao, J. H. Wang, D. Z. Wang, S. X. Yang, Y. Tu, J. G. Wen, H. L. Wu, Z. F. Ren, D. T. Verebelyi, M. Paranthaman, T. Aytug, D. K. Christen, R. N. Bhattacharya, R. D. Blaugher

Nanomaterials Chemistry Group

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Growth of epitaxial Cr-doped (Tl,Bi)-1212 films on LaAlO₃ substrates by pulsed laser deposition (PLD) and post-deposition annealing in static air has been achieved. The films exhibit a high transport J_c of over 1.5×10⁶ A cm^-2 at 77 K and self-field. T_c values measured by the four-probe method are in the range 94-100 K. ICP emission spectroscopy measurement shows a thallium deficiency, with about 0.15 atom bismuth per formula in the film. XRD θ-2θ, φ and ω scans show that the dominant phase is 1212, with excellent epitaxy. The film surface has typical PLD morphology as analyzed by SEM. TEM analysis found some inclusions in the film, and HREM found that three 1201 layers exist between the interface of 1212 phase and substrate.

Original language	English
Pages (from-to)	173-177
Number of pages	5
Journal	Superconductor Science and Technology
Volume	13
Issue number	2
DOIs	https://doi.org/10.1088/0953-2048/13/2/310
State	Published - Feb 2000

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Lao, J. Y., Wang, J. H., Wang, D. Z., Yang, S. X., Tu, Y., Wen, J. G., Wu, H. L., Ren, Z. F., Verebelyi, D. T., Paranthaman, M., Aytug, T., Christen, D. K., Bhattacharya, R. N., & Blaugher, R. D. (2000). Synthesis and characterization of thallium-based 1212 films with high critical current density on LaAlO₃ substrates. Superconductor Science and Technology, 13(2), 173-177. https://doi.org/10.1088/0953-2048/13/2/310

@article{fb412efd6c2a425a82b873c4bb49482c,

title = "Synthesis and characterization of thallium-based 1212 films with high critical current density on LaAlO3 substrates",

abstract = "Growth of epitaxial Cr-doped (Tl,Bi)-1212 films on LaAlO3 substrates by pulsed laser deposition (PLD) and post-deposition annealing in static air has been achieved. The films exhibit a high transport Jc of over 1.5×106 A cm-2 at 77 K and self-field. Tc values measured by the four-probe method are in the range 94-100 K. ICP emission spectroscopy measurement shows a thallium deficiency, with about 0.15 atom bismuth per formula in the film. XRD θ-2θ, φ and ω scans show that the dominant phase is 1212, with excellent epitaxy. The film surface has typical PLD morphology as analyzed by SEM. TEM analysis found some inclusions in the film, and HREM found that three 1201 layers exist between the interface of 1212 phase and substrate.",

author = "Lao, {J. Y.} and Wang, {J. H.} and Wang, {D. Z.} and Yang, {S. X.} and Y. Tu and Wen, {J. G.} and Wu, {H. L.} and Ren, {Z. F.} and Verebelyi, {D. T.} and M. Paranthaman and T. Aytug and Christen, {D. K.} and Bhattacharya, {R. N.} and Blaugher, {R. D.}",

year = "2000",

month = feb,

doi = "10.1088/0953-2048/13/2/310",

language = "English",

volume = "13",

pages = "173--177",

journal = "Superconductor Science and Technology",

issn = "0953-2048",

publisher = "IOP Publishing",

number = "2",

}

Lao, JY, Wang, JH, Wang, DZ, Yang, SX, Tu, Y, Wen, JG, Wu, HL, Ren, ZF, Verebelyi, DT, Paranthaman, M , Aytug, T, Christen, DK, Bhattacharya, RN & Blaugher, RD 2000, 'Synthesis and characterization of thallium-based 1212 films with high critical current density on LaAlO₃ substrates', Superconductor Science and Technology, vol. 13, no. 2, pp. 173-177. https://doi.org/10.1088/0953-2048/13/2/310

TY - JOUR

T1 - Synthesis and characterization of thallium-based 1212 films with high critical current density on LaAlO3 substrates

AU - Lao, J. Y.

AU - Wang, J. H.

AU - Wang, D. Z.

AU - Yang, S. X.

AU - Tu, Y.

AU - Wen, J. G.

AU - Wu, H. L.

AU - Ren, Z. F.

AU - Verebelyi, D. T.

AU - Paranthaman, M.

AU - Aytug, T.

AU - Christen, D. K.

AU - Bhattacharya, R. N.

AU - Blaugher, R. D.

PY - 2000/2

Y1 - 2000/2

N2 - Growth of epitaxial Cr-doped (Tl,Bi)-1212 films on LaAlO3 substrates by pulsed laser deposition (PLD) and post-deposition annealing in static air has been achieved. The films exhibit a high transport Jc of over 1.5×106 A cm-2 at 77 K and self-field. Tc values measured by the four-probe method are in the range 94-100 K. ICP emission spectroscopy measurement shows a thallium deficiency, with about 0.15 atom bismuth per formula in the film. XRD θ-2θ, φ and ω scans show that the dominant phase is 1212, with excellent epitaxy. The film surface has typical PLD morphology as analyzed by SEM. TEM analysis found some inclusions in the film, and HREM found that three 1201 layers exist between the interface of 1212 phase and substrate.

AB - Growth of epitaxial Cr-doped (Tl,Bi)-1212 films on LaAlO3 substrates by pulsed laser deposition (PLD) and post-deposition annealing in static air has been achieved. The films exhibit a high transport Jc of over 1.5×106 A cm-2 at 77 K and self-field. Tc values measured by the four-probe method are in the range 94-100 K. ICP emission spectroscopy measurement shows a thallium deficiency, with about 0.15 atom bismuth per formula in the film. XRD θ-2θ, φ and ω scans show that the dominant phase is 1212, with excellent epitaxy. The film surface has typical PLD morphology as analyzed by SEM. TEM analysis found some inclusions in the film, and HREM found that three 1201 layers exist between the interface of 1212 phase and substrate.

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EP - 177

JO - Superconductor Science and Technology

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IS - 2

ER -

Synthesis and characterization of thallium-based 1212 films with high critical current density on LaAlO₃ substrates

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