Synthesis and characterization of Ca-doped LaMnAsO

Yong Liu; Warren E. Straszheim; Pinaki Das; Farhan Islam; Thomas W. Heitmann; Robert J. McQueeney; David Vaknin

doi:10.1103/PhysRevMaterials.2.054410

Synthesis and characterization of Ca-doped LaMnAsO

Yong Liu, Warren E. Straszheim, Pinaki Das, Farhan Islam, Thomas W. Heitmann, Robert J. McQueeney, David Vaknin

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5 Scopus citations

Abstract

We report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La3+ site by Ca2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La1-xCax)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x≤0.01. Magnetic susceptibility of the parent and the x=0.002(xnom=0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of both the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, TN=355±5 K.

Original language	English
Article number	054410
Journal	Physical Review Materials
Volume	2
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevMaterials.2.054410
State	Published - May 18 2018
Externally published	Yes

Funding

This research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering. Ames Laboratory is operated for the U.S. Department of Energy by Iowa State University under Contract No. DE-AC02-07CH11358.

Funders	Funder number
Office of Basic Energy Sciences
U.S. Department of Energy
Iowa State University
Division of Materials Sciences and Engineering

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10.1103/PhysRevMaterials.2.054410

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title = "Synthesis and characterization of Ca-doped LaMnAsO",

abstract = "We report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La3+ site by Ca2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La1-xCax)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x≤0.01. Magnetic susceptibility of the parent and the x=0.002(xnom=0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of both the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, TN=355±5 K.",

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AU - Liu, Yong

AU - Straszheim, Warren E.

AU - Das, Pinaki

AU - Islam, Farhan

AU - Heitmann, Thomas W.

AU - McQueeney, Robert J.

AU - Vaknin, David

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AB - We report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La3+ site by Ca2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La1-xCax)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x≤0.01. Magnetic susceptibility of the parent and the x=0.002(xnom=0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of both the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, TN=355±5 K.

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Synthesis and characterization of Ca-doped LaMnAsO

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