Switching Magnetic Anisotropy of SrRu O3 by Capping-Layer-Induced Octahedral Distortion

Shan Lin; Qinghua Zhang; Manuel A. Roldan; Sujit Das; Timothy Charlton; Michael R. Fitzsimmons; Qiao Jin; Sisi Li; Zhenping Wu; Shuang Chen; Haizhong Guo; Xin Tong; Meng He; Chen Ge; Can Wang; Lin Gu; Kui Juan Jin; Er Jia Guo

doi:10.1103/PhysRevApplied.13.034033

Switching Magnetic Anisotropy of SrRu O3 by Capping-Layer-Induced Octahedral Distortion

Shan Lin, Qinghua Zhang, Manuel A. Roldan, Sujit Das, Timothy Charlton, Michael R. Fitzsimmons, Qiao Jin, Sisi Li, Zhenping Wu, Shuang Chen, Haizhong Guo, Xin Tong, Meng He, Chen Ge, Can Wang, Lin Gu, Kui Juan Jin, Er Jia Guo

Reflectometry

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Materials with large perpendicular magnetic anisotropy (PMA) are candidates for spintronic devices, such as magnetic random-access memory, etc., due to their stable magnetic reference states. Because of shape anisotropy, the magnetic easy axis of oxide thin films favors in-plane orientation. In this Paper, we demonstrate a convenient means to control the magnetic anisotropy of SrRuO3 (SRO) ultrathin layers from in-plane to out-of-plane by capping with nonmagnetic materials. Tuning the anisotropy is achieved by imposition of symmetry mismatch at the interface-induced structural transition of SRO with suppressed octahedral tilt. These results suggest a potential direction for engineering magnetic oxide thin films with flexible tunable PMA using capping-layer-induced dissimilar symmetry.

Original language	English
Article number	034033
Journal	Physical Review Applied
Volume	13
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevApplied.13.034033
State	Published - Feb 2020

Funding

E.J.G. is supported by the Hundred Talents Program from Chinese Academy of Sciences. M.R. acknowledges the use of facilities within the Eyring Materials Center at Arizona State University. This work is supported by the National Natural Science Foundation of China (Grant No. 11974390), the National Key R&D Program of China (Grants No. 2019YFA0308500 and No. 2017YFA0303604), and the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDJ-SSW-SLH020). The research at ORNLs Spallation Neutron Source was sponsored by the Scientific User Facilities Division, BES, U.S. DOE.

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10.1103/PhysRevApplied.13.034033

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Lin, S., Zhang, Q., Roldan, M. A., Das, S., Charlton, T., Fitzsimmons, M. R., Jin, Q., Li, S., Wu, Z., Chen, S., Guo, H., Tong, X., He, M., Ge, C., Wang, C., Gu, L., Jin, K. J., & Guo, E. J. (2020). Switching Magnetic Anisotropy of SrRu O3 by Capping-Layer-Induced Octahedral Distortion. Physical Review Applied, 13(3), Article 034033. https://doi.org/10.1103/PhysRevApplied.13.034033

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title = "Switching Magnetic Anisotropy of SrRu O3 by Capping-Layer-Induced Octahedral Distortion",

abstract = "Materials with large perpendicular magnetic anisotropy (PMA) are candidates for spintronic devices, such as magnetic random-access memory, etc., due to their stable magnetic reference states. Because of shape anisotropy, the magnetic easy axis of oxide thin films favors in-plane orientation. In this Paper, we demonstrate a convenient means to control the magnetic anisotropy of SrRuO3 (SRO) ultrathin layers from in-plane to out-of-plane by capping with nonmagnetic materials. Tuning the anisotropy is achieved by imposition of symmetry mismatch at the interface-induced structural transition of SRO with suppressed octahedral tilt. These results suggest a potential direction for engineering magnetic oxide thin films with flexible tunable PMA using capping-layer-induced dissimilar symmetry.",

author = "Shan Lin and Qinghua Zhang and Roldan, {Manuel A.} and Sujit Das and Timothy Charlton and Fitzsimmons, {Michael R.} and Qiao Jin and Sisi Li and Zhenping Wu and Shuang Chen and Haizhong Guo and Xin Tong and Meng He and Chen Ge and Can Wang and Lin Gu and Jin, {Kui Juan} and Guo, {Er Jia}",

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AU - Lin, Shan

AU - Zhang, Qinghua

AU - Roldan, Manuel A.

AU - Das, Sujit

AU - Charlton, Timothy

AU - Fitzsimmons, Michael R.

AU - Jin, Qiao

AU - Li, Sisi

AU - Wu, Zhenping

AU - Chen, Shuang

AU - Guo, Haizhong

AU - Tong, Xin

AU - He, Meng

AU - Ge, Chen

AU - Wang, Can

AU - Gu, Lin

AU - Jin, Kui Juan

AU - Guo, Er Jia

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N2 - Materials with large perpendicular magnetic anisotropy (PMA) are candidates for spintronic devices, such as magnetic random-access memory, etc., due to their stable magnetic reference states. Because of shape anisotropy, the magnetic easy axis of oxide thin films favors in-plane orientation. In this Paper, we demonstrate a convenient means to control the magnetic anisotropy of SrRuO3 (SRO) ultrathin layers from in-plane to out-of-plane by capping with nonmagnetic materials. Tuning the anisotropy is achieved by imposition of symmetry mismatch at the interface-induced structural transition of SRO with suppressed octahedral tilt. These results suggest a potential direction for engineering magnetic oxide thin films with flexible tunable PMA using capping-layer-induced dissimilar symmetry.

AB - Materials with large perpendicular magnetic anisotropy (PMA) are candidates for spintronic devices, such as magnetic random-access memory, etc., due to their stable magnetic reference states. Because of shape anisotropy, the magnetic easy axis of oxide thin films favors in-plane orientation. In this Paper, we demonstrate a convenient means to control the magnetic anisotropy of SrRuO3 (SRO) ultrathin layers from in-plane to out-of-plane by capping with nonmagnetic materials. Tuning the anisotropy is achieved by imposition of symmetry mismatch at the interface-induced structural transition of SRO with suppressed octahedral tilt. These results suggest a potential direction for engineering magnetic oxide thin films with flexible tunable PMA using capping-layer-induced dissimilar symmetry.

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Switching Magnetic Anisotropy of SrRu O3 by Capping-Layer-Induced Octahedral Distortion

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