Switching Behaviors of Graphene-Boron Nitride Nanotube Heterojunctions

Vyom Parashar; Corentin P. Durand; Boyi Hao; Rodrigo G. Amorim; Ravindra Pandey; Bishnu Tiwari; Dongyan Zhang; Yang Liu; An Ping Li; Yoke Khin Yap

doi:10.1038/srep12238

Switching Behaviors of Graphene-Boron Nitride Nanotube Heterojunctions

Vyom Parashar, Corentin P. Durand, Boyi Hao, Rodrigo G. Amorim, Ravindra Pandey, Bishnu Tiwari, Dongyan Zhang, Yang Liu, An Ping Li, Yoke Khin Yap

Scanning Tunneling Microscopy Group

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 10⁵ at a turn-on voltage as low as 0.5 V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.

Original language	English
Article number	12238
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep12238
State	Published - Jul 20 2015

Funding

This work is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division (Grant DE-SC0012762). The theoretical effort is supported by the US Army Research Laboratory, Weapons and Materials Directorate “Hybrid Nano and Nano-Bio Materials” Program. Part of the experimental work was conducted at the Center for Nanophase Materials Sciences (Project CNMS2012-083), which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, the U.S. Department of Energy. Part of this work was performed at the Center for Integrated Nanotechnologies (Project U2011A1074), an Office of Science User Facility operated for the U.S. Department of Energy, Office of Science by Los Alamos National Laboratory (Contract DE-AC52-06NA25396) and Sandia National Laboratories (Contract DE-AC04-94AL85000).

Funders	Funder number
Scientific User Facilities Division	U2011A1074
Weapons and Materials Directorate	CNMS2012-083
U.S. Department of Energy
Office of Science
Basic Energy Sciences
Oak Ridge National Laboratory
Sandia National Laboratories	DE-AC04-94AL85000
Army Research Laboratory
Los Alamos National Laboratory	DE-AC52-06NA25396
Division of Materials Sciences and Engineering	DE-SC0012762

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abstract = "High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5 V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.",

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AU - Parashar, Vyom

AU - Durand, Corentin P.

AU - Hao, Boyi

AU - Amorim, Rodrigo G.

AU - Pandey, Ravindra

AU - Tiwari, Bishnu

AU - Zhang, Dongyan

AU - Liu, Yang

AU - Li, An Ping

AU - Yap, Yoke Khin

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AB - High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5 V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.

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Switching Behaviors of Graphene-Boron Nitride Nanotube Heterojunctions

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