Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides

Xufan Li; Ethan Kahn; Ethan Kahn; Gugang Chen; Xiahan Sang; Jincheng Lei; Donata Passarello; Akinola D. Oyedele; Dante Zakhidov; Kai Wen Chen; Yu Xun Chen; Shang Hsien Hsieh; Kazunori Fujisawa; Raymond R. Unocic; Kai Xiao; Alberto Salleo; Michael F. Toney; Chia Hao Chen; Efthimios Kaxiras; Mauricio Terrones; Boris I. Yakobson; Avetik R. Harutyunyan

doi:10.1021/acsnano.0c00132

Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides

Xufan Li, Ethan Kahn, Ethan Kahn, Gugang Chen, Xiahan Sang, Jincheng Lei, Donata Passarello, Akinola D. Oyedele, Dante Zakhidov, Kai Wen Chen, Yu Xun Chen, Shang Hsien Hsieh, Kazunori Fujisawa, Raymond R. Unocic, Kai Xiao, Alberto Salleo, Michael F. Toney, Chia Hao Chen, Efthimios Kaxiras, Mauricio TerronesBoris I. Yakobson, Avetik R. Harutyunyan

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

The role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. The surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.

Original language	English
Pages (from-to)	6570-6581
Number of pages	12
Journal	ACS Nano
Volume	14
Issue number	6
DOIs	https://doi.org/10.1021/acsnano.0c00132
State	Published - Jun 23 2020

Funding

We thank Jordan Lerach and Sebastian Van Nuffel for assisting TOF-SIMS experiments, Tianyi Zhang and Ana Laura Elias for TEM measurements, Brian Tackett for XPS measurement, Gamini Sumanasekera for providing SiO/Si substrates with various thickness of oxide layers, and Jesse Sun-Woo Ko and Maria Lukatskaya for assisting with some of SEM measurements. STEM characterization and FET fabrication/measurement were conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. The research using Stanford Synchrotron Radiation Light Source at SLAC National Accelerator Laboratory is supported by U.S. Department of Energy, Office of Science, Basic Energy Sciences under Contract No. DE-AC02-76SF00515. E.K. is funded by the Center for Integrated Quantum Materials, NSF Grant No. DMR-1231319, and by ARO MURI Award No. W911NF-14-0247. D.Z. is supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1656518. AES. and conventional XPS measurements were performed at the Stanford Nano Shared Facilities (SNSF), supported by the National Science Foundation under Award No. ECCS-1542152. 2 ++

Funders	Funder number
Center for Integrated Quantum Materials
National Science Foundation	DGE-1656518, DMR-1231319, ECCS-1542152
U.S. Department of Energy
Army Research Office	W911NF-14-0247
Office of Science
Basic Energy Sciences	DE-AC02-76SF00515

Keywords

MoS
edge passivation
lithography-free patterning
strain
surfactant

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10.1021/acsnano.0c00132

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Li, X., Kahn, E., Kahn, E., Chen, G., Sang, X., Lei, J., Passarello, D., Oyedele, A. D., Zakhidov, D., Chen, K. W., Chen, Y. X., Hsieh, S. H., Fujisawa, K., Unocic, R. R., Xiao, K., Salleo, A., Toney, M. F., Chen, C. H., Kaxiras, E., ... Harutyunyan, A. R. (2020). Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides. ACS Nano, 14(6), 6570-6581. https://doi.org/10.1021/acsnano.0c00132

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title = "Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides",

abstract = "The role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. The surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.",

keywords = "MoS, edge passivation, lithography-free patterning, strain, surfactant",

author = "Xufan Li and Ethan Kahn and Ethan Kahn and Gugang Chen and Xiahan Sang and Jincheng Lei and Donata Passarello and Oyedele, {Akinola D.} and Dante Zakhidov and Chen, {Kai Wen} and Chen, {Yu Xun} and Hsieh, {Shang Hsien} and Kazunori Fujisawa and Unocic, {Raymond R.} and Kai Xiao and Alberto Salleo and Toney, {Michael F.} and Chen, {Chia Hao} and Efthimios Kaxiras and Mauricio Terrones and Yakobson, {Boris I.} and Harutyunyan, {Avetik R.}",

note = "Publisher Copyright: {\textcopyright} 2020 American Chemical Society.",

year = "2020",

month = jun,

day = "23",

doi = "10.1021/acsnano.0c00132",

language = "English",

volume = "14",

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Li, X, Kahn, E, Kahn, E, Chen, G, Sang, X, Lei, J, Passarello, D, Oyedele, AD, Zakhidov, D, Chen, KW, Chen, YX, Hsieh, SH, Fujisawa, K, Unocic, RR, Xiao, K, Salleo, A, Toney, MF, Chen, CH, Kaxiras, E, Terrones, M, Yakobson, BI & Harutyunyan, AR 2020, 'Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides', ACS Nano, vol. 14, no. 6, pp. 6570-6581. https://doi.org/10.1021/acsnano.0c00132

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T1 - Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides

AU - Li, Xufan

AU - Kahn, Ethan

AU - Chen, Gugang

AU - Sang, Xiahan

AU - Lei, Jincheng

AU - Passarello, Donata

AU - Oyedele, Akinola D.

AU - Zakhidov, Dante

AU - Chen, Kai Wen

AU - Chen, Yu Xun

AU - Hsieh, Shang Hsien

AU - Fujisawa, Kazunori

AU - Unocic, Raymond R.

AU - Xiao, Kai

AU - Salleo, Alberto

AU - Toney, Michael F.

AU - Chen, Chia Hao

AU - Kaxiras, Efthimios

AU - Terrones, Mauricio

AU - Yakobson, Boris I.

AU - Harutyunyan, Avetik R.

PY - 2020/6/23

Y1 - 2020/6/23

N2 - The role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. The surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.

AB - The role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. The surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.

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DO - 10.1021/acsnano.0c00132

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SN - 1936-0851

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SP - 6570

EP - 6581

JO - ACS Nano

JF - ACS Nano

IS - 6

ER -

Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides

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Keywords

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