Surface versus bulk state in topological insulator Bi2Se 3 under environmental disorder

Matthew Brahlek; Yong Seung Kim; Namrata Bansal; Eliav Edrey; Seongshik Oh

doi:10.1063/1.3607484

Surface versus bulk state in topological insulator Bi₂Se ₃ under environmental disorder

Matthew Brahlek, Yong Seung Kim, Namrata Bansal, Eliav Edrey, Seongshik Oh

Research output: Contribution to journal › Article › peer-review

76 Scopus citations

Abstract

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi₂Se₃, however, the Fermi level naturally resides in the conduction band due to intrinsic doping by selenium vacancies, leading to metallic bulk states. In such non-ideal TIs, it is not well understood how the surface and bulk states behave under environmental disorder. In this letter, based on transport measurements of Bi₂Se₃ thin films, we show that the bulk states are sensitive to environmental disorder but the surface states remain robust.

Original language	English
Article number	012109
Journal	Applied Physics Letters
Volume	99
Issue number	1
DOIs	https://doi.org/10.1063/1.3607484
State	Published - Jul 4 2011
Externally published	Yes

Funding

We thank Peter Armitage, N. P. Ong, and Johnpierre Paglione for useful discussion. This work is supported by IAMDN of Rutgers University, National Science Foundation (NSF DMR-0845464), and Office of Naval Research (ONR N000140910749).

Funders	Funder number
IAMDN of Rutgers University
National Science Foundation	DMR-0845464
Office of Naval Research	N000140910749
Directorate for Mathematical and Physical Sciences	0845464

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Surface versus bulk state in topological insulator Bi₂Se ₃ under environmental disorder

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