Surface treatments and their effects on the performance of Cd1-xZnxTe radiation detectors

Y. Cui; G. Wright; K. Kolokolnikov; C. Barnett; K. Reed; U. N. Roy; A. Burger; R. B. James

doi:10.1117/12.450751

Surface treatments and their effects on the performance of Cd_1-xZn_xTe radiation detectors

Y. Cui, G. Wright, K. Kolokolnikov, C. Barnett, K. Reed, U. N. Roy, A. Burger, R. B. James

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Detector grade, charge compensated Cd_1-xZn_xTe (CZT) crystals were treated by mechanical polishing, chemical solution etching, and radio-frequency gold sputtering. The crystals and detectors were next studied using direct current (DC) photoconductivity and low-temperature photoluminescence (PL). The DC photocurrent was analyzed with a steady state continuity equation and the results were correlated with PL and gamma-ray detector performance tests. The dependence of the electron lifetime on the light intensity of the CZT detector was consistent with a Shockley-Read one-center model. It was found that the surface recombination velocities, the effective mobility-lifetime products, and gamma-ray performances of CZT crystals are modified dramatically by the choice of chemical etchant.

Original language	English
Pages (from-to)	12-22
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4507
DOIs	https://doi.org/10.1117/12.450751
State	Published - 2001
Externally published	Yes
Event	Hard X-Ray and Gamma-Ray Detector Physics III - San Diego, CA, United States Duration: Jul 30 2001 → Aug 1 2001

Keywords

CdZnTe
Chemical etching
DC photocurrent
Detector performance
Gamma-ray detectors
Photoluminescence
Surface recombination

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10.1117/12.450751

Cite this

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title = "Surface treatments and their effects on the performance of Cd1-xZnxTe radiation detectors",

abstract = "Detector grade, charge compensated Cd1-xZnxTe (CZT) crystals were treated by mechanical polishing, chemical solution etching, and radio-frequency gold sputtering. The crystals and detectors were next studied using direct current (DC) photoconductivity and low-temperature photoluminescence (PL). The DC photocurrent was analyzed with a steady state continuity equation and the results were correlated with PL and gamma-ray detector performance tests. The dependence of the electron lifetime on the light intensity of the CZT detector was consistent with a Shockley-Read one-center model. It was found that the surface recombination velocities, the effective mobility-lifetime products, and gamma-ray performances of CZT crystals are modified dramatically by the choice of chemical etchant.",

keywords = "CdZnTe, Chemical etching, DC photocurrent, Detector performance, Gamma-ray detectors, Photoluminescence, Surface recombination",

author = "Y. Cui and G. Wright and K. Kolokolnikov and C. Barnett and K. Reed and Roy, {U. N.} and A. Burger and James, {R. B.}",

year = "2001",

doi = "10.1117/12.450751",

language = "English",

volume = "4507",

pages = "12--22",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Hard X-Ray and Gamma-Ray Detector Physics III ; Conference date: 30-07-2001 Through 01-08-2001",

}

TY - JOUR

T1 - Surface treatments and their effects on the performance of Cd1-xZnxTe radiation detectors

AU - Cui, Y.

AU - Wright, G.

AU - Kolokolnikov, K.

AU - Barnett, C.

AU - Reed, K.

AU - Roy, U. N.

AU - Burger, A.

AU - James, R. B.

PY - 2001

Y1 - 2001

N2 - Detector grade, charge compensated Cd1-xZnxTe (CZT) crystals were treated by mechanical polishing, chemical solution etching, and radio-frequency gold sputtering. The crystals and detectors were next studied using direct current (DC) photoconductivity and low-temperature photoluminescence (PL). The DC photocurrent was analyzed with a steady state continuity equation and the results were correlated with PL and gamma-ray detector performance tests. The dependence of the electron lifetime on the light intensity of the CZT detector was consistent with a Shockley-Read one-center model. It was found that the surface recombination velocities, the effective mobility-lifetime products, and gamma-ray performances of CZT crystals are modified dramatically by the choice of chemical etchant.

AB - Detector grade, charge compensated Cd1-xZnxTe (CZT) crystals were treated by mechanical polishing, chemical solution etching, and radio-frequency gold sputtering. The crystals and detectors were next studied using direct current (DC) photoconductivity and low-temperature photoluminescence (PL). The DC photocurrent was analyzed with a steady state continuity equation and the results were correlated with PL and gamma-ray detector performance tests. The dependence of the electron lifetime on the light intensity of the CZT detector was consistent with a Shockley-Read one-center model. It was found that the surface recombination velocities, the effective mobility-lifetime products, and gamma-ray performances of CZT crystals are modified dramatically by the choice of chemical etchant.

KW - CdZnTe

KW - Chemical etching

KW - DC photocurrent

KW - Detector performance

KW - Gamma-ray detectors

KW - Photoluminescence

KW - Surface recombination

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U2 - 10.1117/12.450751

DO - 10.1117/12.450751

M3 - Conference article

AN - SCOPUS:0035762150

SN - 0277-786X

VL - 4507

SP - 12

EP - 22

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Hard X-Ray and Gamma-Ray Detector Physics III

Y2 - 30 July 2001 through 1 August 2001

ER -

Surface treatments and their effects on the performance of Cd_1-xZn_xTe radiation detectors

Abstract

Keywords

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