Surface reconstructions and faceting of the Ga/Ge(113) system

Zheng Gai; R. G. Zhao; Bo Gao; Hang Ji; W. S. Yang

doi:10.1016/S0039-6028(97)00106-4

Surface reconstructions and faceting of the Ga/Ge(113) system

Zheng Gai, R. G. Zhao, Bo Gao, Hang Ji, W. S. Yang

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Surfaces of the Ga/Ge(113) system have been studied by means of low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). It has been found that the only two reconstructions of the system, i.e., (^{8 -1}_{5 1}) and "1 × 2", consist of the same (1 × 2)-like building blocks and, hence have only slightly different coverages. Coexisting with the reconstructions are small (112) and (115) facets, which develop through bunching of steps. On the basis of LEED patterns and STM images and under the guidance of the common characteristics of surface structures of III/IV systems, structural models have been proposed for these reconstructions and the (112) facets for further investigation. It has been noticed that only small percentages of a monolayer of Ga can make the Ge(113) surface entirely 3 × 1; otherwise it contains a great many small 3 × 2 patches scattered inside large 3 × 1 domains.

Original language	English
Pages (from-to)	1-12
Number of pages	12
Journal	Surface Science
Volume	383
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(97)00106-4
State	Published - Jul 1 1997
Externally published	Yes

Funding

This work was supported by the National Natural Science Foundation of China and the Doctoral Program Foundation of the Educational Ministry of China.

Keywords

Faceting
Gallium
Germanium
High index single crystal surfaces
Low-energy electron diffraction
Metal-semiconductor interfaces
Scanning tunneling microscopy
Surface reconstruction

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10.1016/S0039-6028(97)00106-4

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title = "Surface reconstructions and faceting of the Ga/Ge(113) system",

abstract = "Surfaces of the Ga/Ge(113) system have been studied by means of low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). It has been found that the only two reconstructions of the system, i.e., (8 -15 1) and {"}1 × 2{"}, consist of the same (1 × 2)-like building blocks and, hence have only slightly different coverages. Coexisting with the reconstructions are small (112) and (115) facets, which develop through bunching of steps. On the basis of LEED patterns and STM images and under the guidance of the common characteristics of surface structures of III/IV systems, structural models have been proposed for these reconstructions and the (112) facets for further investigation. It has been noticed that only small percentages of a monolayer of Ga can make the Ge(113) surface entirely 3 × 1; otherwise it contains a great many small 3 × 2 patches scattered inside large 3 × 1 domains.",

keywords = "Faceting, Gallium, Germanium, High index single crystal surfaces, Low-energy electron diffraction, Metal-semiconductor interfaces, Scanning tunneling microscopy, Surface reconstruction",

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T1 - Surface reconstructions and faceting of the Ga/Ge(113) system

AU - Gai, Zheng

AU - Zhao, R. G.

AU - Gao, Bo

AU - Ji, Hang

AU - Yang, W. S.

PY - 1997/7/1

Y1 - 1997/7/1

N2 - Surfaces of the Ga/Ge(113) system have been studied by means of low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). It has been found that the only two reconstructions of the system, i.e., (8 -15 1) and "1 × 2", consist of the same (1 × 2)-like building blocks and, hence have only slightly different coverages. Coexisting with the reconstructions are small (112) and (115) facets, which develop through bunching of steps. On the basis of LEED patterns and STM images and under the guidance of the common characteristics of surface structures of III/IV systems, structural models have been proposed for these reconstructions and the (112) facets for further investigation. It has been noticed that only small percentages of a monolayer of Ga can make the Ge(113) surface entirely 3 × 1; otherwise it contains a great many small 3 × 2 patches scattered inside large 3 × 1 domains.

AB - Surfaces of the Ga/Ge(113) system have been studied by means of low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). It has been found that the only two reconstructions of the system, i.e., (8 -15 1) and "1 × 2", consist of the same (1 × 2)-like building blocks and, hence have only slightly different coverages. Coexisting with the reconstructions are small (112) and (115) facets, which develop through bunching of steps. On the basis of LEED patterns and STM images and under the guidance of the common characteristics of surface structures of III/IV systems, structural models have been proposed for these reconstructions and the (112) facets for further investigation. It has been noticed that only small percentages of a monolayer of Ga can make the Ge(113) surface entirely 3 × 1; otherwise it contains a great many small 3 × 2 patches scattered inside large 3 × 1 domains.

KW - Faceting

KW - Gallium

KW - Germanium

KW - High index single crystal surfaces

KW - Low-energy electron diffraction

KW - Metal-semiconductor interfaces

KW - Scanning tunneling microscopy

KW - Surface reconstruction

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JF - Surface Science

IS - 1

ER -

Surface reconstructions and faceting of the Ga/Ge(113) system

Abstract

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