Surface morphologies of He-implanted tungsten

M. E. Bannister; F. W. Meyer; H. Hijazi; K. A. Unocic; L. M. Garrison; C. M. Parish

doi:10.1016/j.nimb.2016.05.003

Surface morphologies of He-implanted tungsten

M. E. Bannister, F. W. Meyer, H. Hijazi, K. A. Unocic, L. M. Garrison, C. M. Parish

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Abstract

Surface morphologies of tungsten surfaces, both polycrystalline and single-crystal [1 1 0], were investigated using SEM and FIB/SEM techniques after implantations at elevated surfaces temperatures (1200–1300 K) using well-characterized, mono-energetic He ion beams with a wide range of ion energies (218 eV–250 keV). Nanofuzz was observed on polycrystalline tungsten (PCW) following implantation of 100-keV He ions at a flux threshold of 0.9 × 10¹⁶ cm⁻² s⁻¹, but not following 200-keV implantations with similar fluxes. No nanofuzz formation was observed on single-crystal [1 1 0] tungsten (SCW), despite fluxes exceeding those demonstrated previously to produce nanofuzz on polycrystalline tungsten. Pre-damaging the single-crystal tungsten with implanted C impurity interstitials did not significantly affect the surface morphologies resulting from the high-flux He ion implantations. The main factor leading to the different observed surface structures for the pristine and C-implanted single-crystal W samples appeared to be the peak He ion flux characterizing the different exposures. It was speculated that nanofuzz formation was not observed for any SCW target exposures because of increased incubation fluences required for such targets.

Original language	English
Pages (from-to)	76-81
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	382
DOIs	https://doi.org/10.1016/j.nimb.2016.05.003
State	Published - Sep 1 2016

Funding

Research sponsored by the LDRD Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy , and the DOE Office of Fusion Energy Sciences . HH was appointed through the ORNL Postdoctoral Research Associates Program administered jointly by Oak Ridge Institute of Science and Education (ORISE), Oak Ridge Associated Universities (ORAU) and Oak Ridge National Laboratory (ORNL). Research supported by the Center for Nanophase Materials Sciences (CNMS) , which is sponsored by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy . CMP supported by Early Career Award, U.S. Department of Energy, Office of Science, Fusion Energy Sciences . This research was performed, in part, using instrumentation (FEI Talos F200X S/TEM) provided by the Department of Energy, Office of Nuclear Energy, Fuel Cycle R&D Program and the Nuclear Science User Facilities.

Funders	Funder number
Center for Nanophase Materials Sciences
DOE Office of Fusion Energy Sciences
Scientific User Facilities Division
U.S. Department of Energy
Office of Science
Basic Energy Sciences
Fusion Energy Sciences
Oak Ridge National Laboratory

Keywords

He nanofuzz formation
Plasma wall interactions
Tungsten surface modification

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10.1016/j.nimb.2016.05.003

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title = "Surface morphologies of He-implanted tungsten",

abstract = "Surface morphologies of tungsten surfaces, both polycrystalline and single-crystal [1 1 0], were investigated using SEM and FIB/SEM techniques after implantations at elevated surfaces temperatures (1200–1300 K) using well-characterized, mono-energetic He ion beams with a wide range of ion energies (218 eV–250 keV). Nanofuzz was observed on polycrystalline tungsten (PCW) following implantation of 100-keV He ions at a flux threshold of 0.9 × 1016 cm−2 s−1, but not following 200-keV implantations with similar fluxes. No nanofuzz formation was observed on single-crystal [1 1 0] tungsten (SCW), despite fluxes exceeding those demonstrated previously to produce nanofuzz on polycrystalline tungsten. Pre-damaging the single-crystal tungsten with implanted C impurity interstitials did not significantly affect the surface morphologies resulting from the high-flux He ion implantations. The main factor leading to the different observed surface structures for the pristine and C-implanted single-crystal W samples appeared to be the peak He ion flux characterizing the different exposures. It was speculated that nanofuzz formation was not observed for any SCW target exposures because of increased incubation fluences required for such targets.",

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AU - Bannister, M. E.

AU - Meyer, F. W.

AU - Hijazi, H.

AU - Unocic, K. A.

AU - Garrison, L. M.

AU - Parish, C. M.

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N2 - Surface morphologies of tungsten surfaces, both polycrystalline and single-crystal [1 1 0], were investigated using SEM and FIB/SEM techniques after implantations at elevated surfaces temperatures (1200–1300 K) using well-characterized, mono-energetic He ion beams with a wide range of ion energies (218 eV–250 keV). Nanofuzz was observed on polycrystalline tungsten (PCW) following implantation of 100-keV He ions at a flux threshold of 0.9 × 1016 cm−2 s−1, but not following 200-keV implantations with similar fluxes. No nanofuzz formation was observed on single-crystal [1 1 0] tungsten (SCW), despite fluxes exceeding those demonstrated previously to produce nanofuzz on polycrystalline tungsten. Pre-damaging the single-crystal tungsten with implanted C impurity interstitials did not significantly affect the surface morphologies resulting from the high-flux He ion implantations. The main factor leading to the different observed surface structures for the pristine and C-implanted single-crystal W samples appeared to be the peak He ion flux characterizing the different exposures. It was speculated that nanofuzz formation was not observed for any SCW target exposures because of increased incubation fluences required for such targets.

AB - Surface morphologies of tungsten surfaces, both polycrystalline and single-crystal [1 1 0], were investigated using SEM and FIB/SEM techniques after implantations at elevated surfaces temperatures (1200–1300 K) using well-characterized, mono-energetic He ion beams with a wide range of ion energies (218 eV–250 keV). Nanofuzz was observed on polycrystalline tungsten (PCW) following implantation of 100-keV He ions at a flux threshold of 0.9 × 1016 cm−2 s−1, but not following 200-keV implantations with similar fluxes. No nanofuzz formation was observed on single-crystal [1 1 0] tungsten (SCW), despite fluxes exceeding those demonstrated previously to produce nanofuzz on polycrystalline tungsten. Pre-damaging the single-crystal tungsten with implanted C impurity interstitials did not significantly affect the surface morphologies resulting from the high-flux He ion implantations. The main factor leading to the different observed surface structures for the pristine and C-implanted single-crystal W samples appeared to be the peak He ion flux characterizing the different exposures. It was speculated that nanofuzz formation was not observed for any SCW target exposures because of increased incubation fluences required for such targets.

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Surface morphologies of He-implanted tungsten

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