Surface-driven electronic structure in LaFeAsO studied by angle-resolved photoemission spectroscopy

Chang Liu, Yongbin Lee, A. D. Palczewski, J. Q. Yan, Takeshi Kondo, B. N. Harmon, R. W. McCallum, T. A. Lograsso, A. Kaminski

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Abstract

We measured the electronic structure of an iron arsenic parent compound LaFeAsO using angle-resolved photoemission spectroscopy (ARPES). By comparing with a full-potential linear augmented plane wave calculation we show that the extra large Γ hole pocket measured via ARPES comes from electronic structure at the sample surface. Based on this we discuss the strong-polarization dependence of the band structure and a temperature-dependent holelike band around the M point. The two phenomena give additional evidences for the existence of the surface-driven electronic structure.

Original languageEnglish
Article number075135
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number7
DOIs
StatePublished - Aug 26 2010

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