Abstract
We measured the electronic structure of an iron arsenic parent compound LaFeAsO using angle-resolved photoemission spectroscopy (ARPES). By comparing with a full-potential linear augmented plane wave calculation we show that the extra large Γ hole pocket measured via ARPES comes from electronic structure at the sample surface. Based on this we discuss the strong-polarization dependence of the band structure and a temperature-dependent holelike band around the M point. The two phenomena give additional evidences for the existence of the surface-driven electronic structure.
Original language | English |
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Article number | 075135 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 82 |
Issue number | 7 |
DOIs | |
State | Published - Aug 26 2010 |