Suppression of Parasitic Voltage Oscillation in Power Modules by Turn-Off Current Zero Placement

Veda Prakash Galigekere, Emre Gurpinar, Shajjad Chowdhury, Jason Pries

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a frequency-domain analysis of the turn-off equivalent switching network of a hard-switched semiconductor switching cell. This paper also proposes a novel method to suppress parasitic voltage ringing by placing the turn-off current zero at the parasitic resonant frequency. The turn-off current was decomposed into ramp functions and a constant-valued function to facilitate obtaining the frequency components of the turn-off current using the Laplace transform of standard signals. The proposed frequency-domain modeling of the parasitic voltage ringing and the suppression were validated by detailed circuit simulation using parameters corresponding to prior literature with experimental validation.

Original languageEnglish
Title of host publication2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5485-5490
Number of pages6
ISBN (Electronic)9798350316445
DOIs
StatePublished - 2023
Event2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 - Nashville, United States
Duration: Oct 29 2023Nov 2 2023

Publication series

Name2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023

Conference

Conference2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
Country/TerritoryUnited States
CityNashville
Period10/29/2311/2/23

Funding

This material is based on the work supported by the US Department of Energy, Office of Energy Efficiency and Renewable Energy, Vehicle Technologies Office under contract number DE-AC05-00OR22725. The authors would like to thank Burak Ozpineci for programmatic support and Pedro Ribeiro for his support in generating MATLAB figures. This manuscript has been authored by UT-Battelle LLC under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doepublic-access-plan) Fig. 2. Small-signal model of the turn-off transition equivalent circuit derived based from Chen et al. [5].

FundersFunder number
U.S. Department of Energy
Wind Energy Technologies OfficeDE-AC05-00OR22725
UT-Battelle

    Keywords

    • Power MOSFET
    • parasitic resonance
    • switching characteristics
    • voltage oscillation
    • voltage overshoot
    • voltage ringing
    • voltage spike

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