Abstract
This paper presents a frequency-domain analysis of the turn-off equivalent switching network of a hard-switched semiconductor switching cell. This paper also proposes a novel method to suppress parasitic voltage ringing by placing the turn-off current zero at the parasitic resonant frequency. The turn-off current was decomposed into ramp functions and a constant-valued function to facilitate obtaining the frequency components of the turn-off current using the Laplace transform of standard signals. The proposed frequency-domain modeling of the parasitic voltage ringing and the suppression were validated by detailed circuit simulation using parameters corresponding to prior literature with experimental validation.
Original language | English |
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Title of host publication | 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 5485-5490 |
Number of pages | 6 |
ISBN (Electronic) | 9798350316445 |
DOIs | |
State | Published - 2023 |
Event | 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 - Nashville, United States Duration: Oct 29 2023 → Nov 2 2023 |
Publication series
Name | 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 |
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Conference
Conference | 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 |
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Country/Territory | United States |
City | Nashville |
Period | 10/29/23 → 11/2/23 |
Funding
This material is based on the work supported by the US Department of Energy, Office of Energy Efficiency and Renewable Energy, Vehicle Technologies Office under contract number DE-AC05-00OR22725. The authors would like to thank Burak Ozpineci for programmatic support and Pedro Ribeiro for his support in generating MATLAB figures. This manuscript has been authored by UT-Battelle LLC under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doepublic-access-plan) Fig. 2. Small-signal model of the turn-off transition equivalent circuit derived based from Chen et al. [5].
Keywords
- Power MOSFET
- parasitic resonance
- switching characteristics
- voltage oscillation
- voltage overshoot
- voltage ringing
- voltage spike