Superconducting magnesium diboride films with Tc ≈ 24 K grown by pulsed laser deposition with in situ anneal

H. M. Christen; H. Y. Zhai; C. Cantoni; M. Paranthaman; B. C. Sales; C. Rouleau; D. P. Norton; D. K. Christen; D. H. Lowndes

doi:10.1016/s0921-4534(01)00398-7

Superconducting magnesium diboride films with T_c ≈ 24 K grown by pulsed laser deposition with in situ anneal

H. M. Christen, H. Y. Zhai, C. Cantoni, M. Paranthaman, B. C. Sales, C. Rouleau, D. P. Norton, D. K. Christen, D. H. Lowndes

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

Thin superconducting films of magnesium diboride (MgB₂) with T_c ≈ 24 K were prepared on various oxide substrates by pulsed laser deposition followed by an in situ anneal. A systematic study of the influence of various in situ annealing parameters shows an optimum temperature of about 600°C in a background of 0.7 atm of Ar/4%H₂ for layers consisting of a mixture of magnesium and boron. Contrary to ex situ approaches (e.g. reacting boron films with magnesium vapor at ≈900°C), these films are processed at a temperature at which MgB₂ does not decompose rapidly even in vacuum. This may prove enabling in the formation of multilayers, junctions, and epitaxial films in future work. Issues related to the improvement of these films and to the possible in situ growth of MgB₂ at elevated temperature are discussed.

Original language	English
Pages (from-to)	157-161
Number of pages	5
Journal	Physica C: Superconductivity and its Applications
Volume	353
Issue number	3-4
DOIs	https://doi.org/10.1016/s0921-4534(01)00398-7
State	Published - May 15 2001

Funding

The authors would like to acknowledge L. Zhang for SEM analysis, W. Acree for assistance in WDS measurements, and X.X. Xi and D. Blank for valuable discussions. This research is sponsored by the US Department of Energy under contract DE-AC05-00OR22735 with the Oak Ridge National Laboratory, managed by UT-Battelle, LLC, and by the DOE Office of Energy Efficiency and Renewable Energy, Office of Power Technologies – Superconductivity Program.

Funders	Funder number
US Department of Energy	DE-AC05-00OR22735
UT-Battelle
Office of Energy Efficiency and Renewable Energy
Oak Ridge National Laboratory
Water Power Technologies Office

Keywords

Magnesium diboride
Pulsed laser deposition
Superconducting films

Access to Document

10.1016/s0921-4534(01)00398-7

Cite this

Christen, H. M., Zhai, H. Y., Cantoni, C., Paranthaman, M., Sales, B. C., Rouleau, C., Norton, D. P., Christen, D. K., & Lowndes, D. H. (2001). Superconducting magnesium diboride films with T_c ≈ 24 K grown by pulsed laser deposition with in situ anneal. Physica C: Superconductivity and its Applications, 353(3-4), 157-161. https://doi.org/10.1016/s0921-4534(01)00398-7

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abstract = "Thin superconducting films of magnesium diboride (MgB2) with Tc ≈ 24 K were prepared on various oxide substrates by pulsed laser deposition followed by an in situ anneal. A systematic study of the influence of various in situ annealing parameters shows an optimum temperature of about 600°C in a background of 0.7 atm of Ar/4%H2 for layers consisting of a mixture of magnesium and boron. Contrary to ex situ approaches (e.g. reacting boron films with magnesium vapor at ≈900°C), these films are processed at a temperature at which MgB2 does not decompose rapidly even in vacuum. This may prove enabling in the formation of multilayers, junctions, and epitaxial films in future work. Issues related to the improvement of these films and to the possible in situ growth of MgB2 at elevated temperature are discussed.",

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AU - Christen, H. M.

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AU - Sales, B. C.

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AU - Norton, D. P.

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AB - Thin superconducting films of magnesium diboride (MgB2) with Tc ≈ 24 K were prepared on various oxide substrates by pulsed laser deposition followed by an in situ anneal. A systematic study of the influence of various in situ annealing parameters shows an optimum temperature of about 600°C in a background of 0.7 atm of Ar/4%H2 for layers consisting of a mixture of magnesium and boron. Contrary to ex situ approaches (e.g. reacting boron films with magnesium vapor at ≈900°C), these films are processed at a temperature at which MgB2 does not decompose rapidly even in vacuum. This may prove enabling in the formation of multilayers, junctions, and epitaxial films in future work. Issues related to the improvement of these films and to the possible in situ growth of MgB2 at elevated temperature are discussed.

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