18O/SIMS characterization of the growth mechanism of doped and undoped α-Al2O3

B. A. Pint; J. R. Martin; L. W. Hobbs

doi:10.1007/BF00665610

¹⁸O/SIMS characterization of the growth mechanism of doped and undoped α-Al₂O₃

B. A. Pint, J. R. Martin, L. W. Hobbs

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283 Scopus citations

Abstract

Sequential oxidation experiments at 1200°C and 1500°C using¹⁶O and >95%¹⁸O-enriched environments were conducted on undoped and Y- and Zr-doped β-NiAl and FeCrAl alloys. After oxidation, samples were analyzed by SIMS sputter depth profiling. At 1200°C, a clear pattern was established where the undoped α-Al₂O₃ was found to grow by the simultaneous transport of both Al and O. Zr-doped α-Al₂O₃ was found to grow mainly by the inward transport of oxygen. The profiles in all cases indicate O diffusion primarily by shortcircuit pathways. Results at 1500°C (only on β-NiAl) indicated a similar behavior but were less conclusive. Y and Zr were found to segregate to the oxide grain boundaries at 1200°C and 1500°C. The segregation of these dopants is believed to impede the cation transport in the α-Al₂O₃ scale and thereby change the oxidation mechanism.

Original language	English
Pages (from-to)	167-195
Number of pages	29
Journal	Oxidation of Metals
Volume	39
Issue number	3-4
DOIs	https://doi.org/10.1007/BF00665610
State	Published - Apr 1993
Externally published	Yes

Keywords

FeCrAl
O/SIMS
reactive element effect
α-AlO
β-NiAl

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10.1007/BF00665610

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@article{8d04ca70d3084c8599efa396711022d1,

title = "18O/SIMS characterization of the growth mechanism of doped and undoped α-Al2O3",

abstract = "Sequential oxidation experiments at 1200°C and 1500°C using16O and >95%18O-enriched environments were conducted on undoped and Y- and Zr-doped β-NiAl and FeCrAl alloys. After oxidation, samples were analyzed by SIMS sputter depth profiling. At 1200°C, a clear pattern was established where the undoped α-Al2O3 was found to grow by the simultaneous transport of both Al and O. Zr-doped α-Al2O3 was found to grow mainly by the inward transport of oxygen. The profiles in all cases indicate O diffusion primarily by shortcircuit pathways. Results at 1500°C (only on β-NiAl) indicated a similar behavior but were less conclusive. Y and Zr were found to segregate to the oxide grain boundaries at 1200°C and 1500°C. The segregation of these dopants is believed to impede the cation transport in the α-Al2O3 scale and thereby change the oxidation mechanism.",

keywords = "FeCrAl, O/SIMS, reactive element effect, α-AlO, β-NiAl",

author = "Pint, {B. A.} and Martin, {J. R.} and Hobbs, {L. W.}",

year = "1993",

month = apr,

doi = "10.1007/BF00665610",

language = "English",

volume = "39",

pages = "167--195",

journal = "Oxidation of Metals",

issn = "0030-770X",

number = "3-4",

}

TY - JOUR

T1 - 18O/SIMS characterization of the growth mechanism of doped and undoped α-Al2O3

AU - Pint, B. A.

AU - Martin, J. R.

AU - Hobbs, L. W.

PY - 1993/4

Y1 - 1993/4

N2 - Sequential oxidation experiments at 1200°C and 1500°C using16O and >95%18O-enriched environments were conducted on undoped and Y- and Zr-doped β-NiAl and FeCrAl alloys. After oxidation, samples were analyzed by SIMS sputter depth profiling. At 1200°C, a clear pattern was established where the undoped α-Al2O3 was found to grow by the simultaneous transport of both Al and O. Zr-doped α-Al2O3 was found to grow mainly by the inward transport of oxygen. The profiles in all cases indicate O diffusion primarily by shortcircuit pathways. Results at 1500°C (only on β-NiAl) indicated a similar behavior but were less conclusive. Y and Zr were found to segregate to the oxide grain boundaries at 1200°C and 1500°C. The segregation of these dopants is believed to impede the cation transport in the α-Al2O3 scale and thereby change the oxidation mechanism.

AB - Sequential oxidation experiments at 1200°C and 1500°C using16O and >95%18O-enriched environments were conducted on undoped and Y- and Zr-doped β-NiAl and FeCrAl alloys. After oxidation, samples were analyzed by SIMS sputter depth profiling. At 1200°C, a clear pattern was established where the undoped α-Al2O3 was found to grow by the simultaneous transport of both Al and O. Zr-doped α-Al2O3 was found to grow mainly by the inward transport of oxygen. The profiles in all cases indicate O diffusion primarily by shortcircuit pathways. Results at 1500°C (only on β-NiAl) indicated a similar behavior but were less conclusive. Y and Zr were found to segregate to the oxide grain boundaries at 1200°C and 1500°C. The segregation of these dopants is believed to impede the cation transport in the α-Al2O3 scale and thereby change the oxidation mechanism.

KW - FeCrAl

KW - O/SIMS

KW - reactive element effect

KW - α-AlO

KW - β-NiAl

UR - http://www.scopus.com/inward/record.url?scp=0027585416&partnerID=8YFLogxK

U2 - 10.1007/BF00665610

DO - 10.1007/BF00665610

M3 - Article

AN - SCOPUS:0027585416

SN - 0030-770X

VL - 39

SP - 167

EP - 195

JO - Oxidation of Metals

JF - Oxidation of Metals

IS - 3-4

ER -

¹⁸O/SIMS characterization of the growth mechanism of doped and undoped α-Al₂O₃

Abstract

Keywords

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