@inproceedings{37ce94935b59403caea31553c6eec345,
title = "Summary of SiC research for transportation applications at ORNL",
abstract = "The theoretical advantages that Silicon Carbide (SiC) material offers are being realized by using prototype or experimental devices in many different applications ranging from medium voltage to high voltage. The main advantages of using SiC based devices are reduced thermal management requirements and smaller passive components which result in higher power density. An overview of the SiC research effort for transportation applications at Oak Ridge National Laboratory (ORNL) is presented in this paper.",
keywords = "High temperature, SiC, Transportation applications",
author = "Madhu Chinthavali and Burak Ozpineci and Tolbert, \{Leon M.\} and Hui Zhang",
year = "2009",
language = "English",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1239--1242",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}