Summary of SiC research for transportation applications at ORNL

Madhu Chinthavali, Burak Ozpineci, Leon M. Tolbert, Hui Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The theoretical advantages that Silicon Carbide (SiC) material offers are being realized by using prototype or experimental devices in many different applications ranging from medium voltage to high voltage. The main advantages of using SiC based devices are reduced thermal management requirements and smaller passive components which result in higher power density. An overview of the SiC research effort for transportation applications at Oak Ridge National Laboratory (ORNL) is presented in this paper.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages1239-1242
Number of pages4
ISBN (Print)9780878493579
StatePublished - 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Country/TerritoryJapan
CityOtsu
Period10/14/0710/19/07

Keywords

  • High temperature
  • SiC
  • Transportation applications

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