Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

Anton V. Ievlev; Marius Chyasnavichyus; Donovan N. Leonard; Joshua C. Agar; Gabriel A. Velarde; Lane W. Martin; Sergei V. Kalinin; Petro Maksymovych; Olga S. Ovchinnikova

doi:10.1088/1361-6528/aaac9b

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

Anton V. Ievlev, Marius Chyasnavichyus, Donovan N. Leonard, Joshua C. Agar, Gabriel A. Velarde, Lane W. Martin, Sergei V. Kalinin, Petro Maksymovych, Olga S. Ovchinnikova

Functional Atomic Force Microscopy Group

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Original language	English
Article number	155302
Journal	Nanotechnology
Volume	29
Issue number	15
DOIs	https://doi.org/10.1088/1361-6528/aaac9b
State	Published - Feb 22 2018

Funding

This material is based upon work supported by the U S Department of Energy, Office of Science, Office of Basic Energy Sciences under contract number DE-AC05-00OR22725 by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US Department of Energy (AVI, OSO). ToF SIMS, and AFM measurements were performed at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. JCA acknowledges support from the Army Research Office under grant W911NF-14-1-0104. GAV acknowledges support from the National Science Foundation under grant DMR-1708615. LWM acknowledges support from the National Science Foundation under grant DMR-1608938. This material is based upon work supported by the U S Department of Energy, Office of Science, Office of Basic Energy Sciences under contract number DE-AC05-00OR22725 by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US Department of Energy (AVI, OSO). ToF SIMS, and AFM measurements were performed at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. JCA acknowledges support from the Army Research Office under grant W911NF-14-1-0104. GAV acknowledges support from the National Science Foundation under grant DMR-1708615. LWM acknowledges support from the National Science Foundation under grant DMR-1608938. Notice This manuscript has been authored by UT-Battelle, LLC, under Contract No. DE-AC0500OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes only. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy. gov/downloads/doe-public-access-plan).

Keywords

atomic force microscopy
ferroelectrics
ion beam fabrication
thin films
time-of-flight secondary ion mass spectrometry

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10.1088/1361-6528/aaac9b

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title = "Subtractive fabrication of ferroelectric thin films with precisely controlled thickness",

abstract = "The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.",

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author = "Ievlev, {Anton V.} and Marius Chyasnavichyus and Leonard, {Donovan N.} and Agar, {Joshua C.} and Velarde, {Gabriel A.} and Martin, {Lane W.} and Kalinin, {Sergei V.} and Petro Maksymovych and Ovchinnikova, {Olga S.}",

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AU - Kalinin, Sergei V.

AU - Maksymovych, Petro

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AB - The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

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Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

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