TY - JOUR
T1 - Submicron ferroelectric elements fabricated by direct electron beam lithography
AU - Kim, Dong Joo
AU - Im, Jin Seo
AU - Thompson, Carol
AU - Streiffer, S. K.
AU - Wiederrecht, G.
AU - Auciello, O.
PY - 2003
Y1 - 2003
N2 - To realize Gigabit density ferroelectric memory devices, downscaling issues involving processing, materials, and fundamental ferroelectric behavior must be resolved. To address patterning and characterizing ferroelectric films at the nanoscale, we have prepared different lateral sizes of ferroelectric PZT capacitors down to 120 nm, using direct-write electron beam lithography. Characterization of the piezoelectric activity of the patterned elements was performed by means of piezoelectric-sensitive scanning probe microscope in the contact mode. Switching of single 120 nm cells was achieved.
AB - To realize Gigabit density ferroelectric memory devices, downscaling issues involving processing, materials, and fundamental ferroelectric behavior must be resolved. To address patterning and characterizing ferroelectric films at the nanoscale, we have prepared different lateral sizes of ferroelectric PZT capacitors down to 120 nm, using direct-write electron beam lithography. Characterization of the piezoelectric activity of the patterned elements was performed by means of piezoelectric-sensitive scanning probe microscope in the contact mode. Switching of single 120 nm cells was achieved.
UR - http://www.scopus.com/inward/record.url?scp=0038037165&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0038037165
SN - 0272-9172
VL - 748
SP - 43
EP - 48
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Ferroelectric Thin Films XI
Y2 - 2 December 2002 through 5 December 2002
ER -