Abstract
The sublimation-recondensation growth of titanium nitride crystals with N/Ti ratio of 0.99 on tungsten substrates is reported. The growth rate dependence on temperature and pressure was determined, and the calculated activation energy was 775.8 ± 29.8 kJ/mol. The lateral and vertical growth rates changed with the time of growth and the fraction of the tungsten substrate surface covered. The orientation relationship of TiN (001) ∥ W (001) with TiN [100] ∥ W [110], a 45° angle between TiN [100] and W [100], occurs not only for TiN crystals deposited on (001) textured tungsten but also for TiN crystals deposited on randomly orientated tungsten. This study demonstrates that this preferred orientational relationship minimizes the lattice mismatch between the TiN and tungsten.
| Original language | English |
|---|---|
| Pages (from-to) | 78-87 |
| Number of pages | 10 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 21 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2010 |
Funding
Acknowledgments The support of the NSF through the grants DMR 0408874 is greatly appreciated. EBSD analysis was conducted at the Oak Ridge National Laboratory SHaRE User Facility, which is sponsored by the Division of Scientific User Facilities, Office of Science, U.S. Department of Energy. Auger Electron Spectroscopy was sponsored by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of FreedomCAR and Vehicle Technologies, as part of the Oak Ridge National Laboratory High Temperature Materials Laboratory User Program, managed by UT-Battelle, LLC, for the U.S. Department of Energy under contract number DE-AC05-00OR22725.