Sub-nanosecond time-of-flight for segmented silicon detectors

R. T. Desouza, A. Alexander, K. Brown, B. Floyd, Z. Q. Gosser, S. Hudan, J. Poehlman, M. J. Rudolph

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Development of a multichannel time-of-flight system for readout of a segmented, ion-passivated, ion-implanted silicon detector is described. This system provides sub-nanosecond resolution (δt≈370ps) even for low energy α particles which deposit E≤7.687MeV in the detector.

Original languageEnglish
Pages (from-to)133-136
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume632
Issue number1
DOIs
StatePublished - Mar 11 2011
Externally publishedYes

Funding

We gratefully acknowledge the support of the U.S. Department of Energy under Grant. No. DE-FG02-88ER-40404.

FundersFunder number
U.S. Department of EnergyDE-FG02-88ER-40404

    Keywords

    • Fast timing
    • Segmented silicon detectors
    • Silicon electronics
    • Time-of-flight

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